Source author record

Pedro Venezuela

Pedro Venezuela appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2021arXiv

Angle-tunable intersubband photoabsorption and enhanced photobleaching in twisted bilayer graphene

Van der Waals heterostructures obtained by artificially stacking two-dimensional crystals represent the frontier of material engineering, demonstrating properties superior to those of the starting materials. Fine control of the interlayer twist angle has opened new possibilities for tailoring the optoelectronic properties of these heterostructures. Twisted bilayer graphene with a strong interlayer coupling is a prototype of twisted heterostructure inheriting the intriguing electronic properties of graphene. Understanding the effects of the twist angle on its out-of-equilibrium optical properties is crucial for devising optoelectronic applications. With this aim, we here combine excitation-resolved hot photoluminescence with femtosecond transient absorption microscopy. The hot charge carrier distribution induced by photo-excitation results in peaked absorption bleaching and photo-induced absorption bands, both with pronounced twist angle dependence. Theoretical simulations of the electronic band structure and of the joint density of states enable to assign these bands to the blocking of interband transitions at the van Hove singularities and to photo-activated intersubband transitions. The tens of picoseconds relaxation dynamics of the observed bands is attributed to the angle-dependence of electron and phonon heat capacities of twisted bilayer graphene.

preprint2011arXiv

Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands

We calculate the double resonant (DR) Raman spectrum of graphene, and determine the lines associated to both phonon-defect processes, and two-phonons ones. Phonon and electronic dispersions reproduce calculations based on density functional theory corrected with GW. Electron-light, -phonon, and -defect scattering matrix elements and the electronic linewidth are explicitly calculated. Defect-induced processes are simulated by considering different kind of idealized defects. For an excitation energy of $ε_L=2.4$ eV, the agreement with measurements is very good and calculations reproduce: the relative intensities among phonon-defect or among two-phonon lines; the measured small widths of the D, $D'$, 2D and $2D'$ lines; the line shapes; the presence of small intensity lines in the 1800, 2000 cm$^{-1}$ range. We determine how the spectra depend on the excitation energy, on the light polarization, on the electronic linewidth, on the kind of defects and on their concentration. According to the present findings, the intensity ratio between the $2D'$ and 2D lines can be used to determine experimentally the electronic linewidth. The intensity ratio between the $D$ and $D'$ lines depends on the kind of model defect, suggesting that this ratio could possibly be used to identify the kind of defects present in actual samples. Charged impurities outside the graphene plane provide an almost undetectable contribution to the Raman signal.