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Source author record

Payal Wadhwa

Payal Wadhwa appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2020arXiv

Signatures of non-trivial band topology in LaAs/LaBi heterostructure

In this article, we investigate non-trivial topological features in a heterostructure of extreme magnetoresistance (XMR) materials LaAs and LaBi using density functional theory (DFT). The proposed heterostructure is found to be dynamically stable and shows bulk band inversion with non-trivial Z_{2} topological invariant and a Dirac cone at the surface. In addition, its electron and hole carrier densities ratio is also calculated to investigate the possibility to possess XMR effect. Electrons and holes in the heterostructure are found to be nearly compensated, thereby facilitating it to be a suitable candidate for XMR studies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Studies of non-trivial band topology and electron-hole compensation in YSb

In this article, we study non-trivial topological phase and electron-hole compensation in extremely large magnetoresistance (XMR) material YSb under hydrostatic pressure using first-principles calculations. YSb is topologically trivial at ambient pressure, but undergoes a reentrant topological phase transition under hydrostatic pressure. The reentrant behavior of topological quantum phase is then studied as a function of charge density ratio under pressure. From the detailed investigation of Fermi surfaces, it is found that electron to hole densities ratio increases with pressure, however a non-trivial topological phase appears without perfect electron-hole compensation. The results indicate that the non-trivial topological phase under hydrostatic pressure may not have maximal influence on the magnetoresistance, and need further investigations through experiments to determine the exact relationship between topology and XMR effect.

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