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Paul Rubinov

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physics.ins-det astro-ph.IM eess.IV physics.acc-ph

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preprint2022arXiv

Tomographic Muon Imaging of the Great Pyramid of Giza

The pyramids of the Giza plateau have fascinated visitors since ancient times and are the last of the Seven Wonders of the ancient world still standing. It has been half a century since Luiz Alvarez and his team used cosmic-ray muon imaging to look for hidden chambers in Khafres Pyramid. Advances in instrumentation for High-Energy Physics (HEP) allowed a new survey, ScanPyramids, to make important new discoveries at the Great Pyramid (Khufu) utilizing the same basic technique that the Alvarez team used, but now with modern instrumentation. The Exploring the Great Pyramid Mission plans to field a very-large muon telescope system that will be transformational with respect to the field of cosmic-ray muon imaging. We plan to field a telescope system that has upwards of 100 times the sensitivity of the equipment that has recently been used at the Great Pyramid, will image muons from nearly all angles and will, for the first time, produce a true tomographic image of such a large structure.

preprint2015arXiv

Development FD-SOI MOSFET amplifiers for integrated read-out circuit of superconducting-tunnel-junction single-photon-detectors

We proposed a new high resolution single photon infrared spectrometer for search for radiative decay of cosmic neutrino background(C$ν$B). The superconducting-tunnel-junctions(STJs) are used as a single photoncounting device. Each STJ consists of Nb/Al/Al${}_{\mathrm{x}}$O${}_{\mathrm{y}}$/Al/Nb layers and their thicknesses are optimized for the operation temperature at 370 mK cooled by a ${}^{3}$He sorption refrigerator. Our STJs achieved the leak current 250 pA and the measured data implies that a smaller area STJ fulfills our requirement. FD-SOI MOSFETs are employed to amplify the STJ signal current in order to increase signal-to-noise ratio(S/N). FD-SOI MOSFETs can be operated at cryogenic temperature of 370 mK, which reduces the noise of the signal amplification system. FD-SOI MOSFET characteristics are measured at cryogenic temperature. The Id-Vgs curve shows a sharper turn on with a higher threshold voltage and the Id-Vds curve shows a non linear shape in linear region at cryogenic temperature. Taking into account these effects, FD-SOI MOSFETs are available for read-out circuit of STJ detectors. The bias voltage for STJ detectors are 0.4 mV and it must be well stabilized to deliver high performance. We proposed an FD-SOI MOSFET based charge integrated amplifier design as a read-out circuit of STJ detectors. The requirements for an operational amplifier used in the amplifier is estimated using SPICE simulation. The op-amp required to have a fast response(GBW$\geq$100 MHz) and it must have low power dissipation as compared to the cooling power of refrigerator.