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Paul Meuffels

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con cond-mat.dis-nn cond-mat.mes-hall cond-mat.other

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preprint2015arXiv

Distinct itinerant spin-density waves and local-moment antiferromagnetism in an intermetallic ErPd$_2$Si$_2$ single crystal

Identifying the nature of magnetism, itinerant or localized, remains a major challenge in condensed-matter science. Purely localized moments appear only in magnetic insulators, whereas itinerant moments more or less co-exist with localized moments in metallic compounds such as the doped-cuprate or the iron-based superconductors, hampering a thorough understanding of the role of magnetism in phenomena like superconductivity or magnetoresistance. Here we distinguish two antiferromagnetic modulations with respective propagation wave vectors of $Q_{\pm}$ = ($H \pm 0.557(1)$, 0, $L \pm 0.150(1)$) and $Q_\text{C}$ = ($H \pm 0.564(1)$, 0, $L$), where $\left(H, L\right)$ are allowed Miller indices, in an ErPd$_2$Si$_2$ single crystal by neutron scattering and establish their respective temperature- and field-dependent phase diagrams. The modulations can co-exist but also compete depending on temperature or applied field strength. They couple differently with the underlying lattice albeit with associated moments in a common direction. The $Q_{\pm}$ modulation may be attributed to localized 4\emph{f} moments while the $Q_\text{C}$ correlates well with itinerant conduction bands, supported by our transport studies. Hence, ErPd$_2$Si$_2$ represents a new model compound that displays clearly-separated itinerant and localized moments, substantiating early theoretical predictions and providing a unique platform allowing the study of itinerant electron behavior in a localized antiferromagnetic matrix.

preprint2015arXiv

Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal

Magnetoresistance (MR) has attracted tremendous attention for possible technological applications. Understanding the role of magnetism in manipulating MR may in turn steer the searching for new applicable MR materials. Here we show that antiferromagnetic (AFM) GdSi metal displays an anisotropic positive MR value (PMRV), up to $\sim$ 415%, accompanied by a large negative thermal volume expansion (NTVE). Around $T_\text{N}$ the PMRV translates to negative, down to $\sim$ -10.5%. Their theory-breaking magnetic-field dependencies [PMRV: dominantly linear; negative MR value (NMRV): quadratic] and the unusual NTVE indicate that PMRV is induced by the formation of magnetic polarons in 5$d$ bands, whereas NMRV is possibly due to abated electron-spin scattering resulting from magnetic-field-aligned local 4$f$ spins. Our results may open up a new avenue of searching for giant MR materials by suppressing the AFM transition temperature, opposite the case in manganites, and provide a promising approach to novel magnetic and electric devices.

preprint2014arXiv

Incommensurate antiferromagnetic order in the manifoldly-frustrated SrTb$_2$O$_4$ with transition temperature up to 4.28 K

The N$\acute{\rm e}$el temperature of the new frustrated family of Sr\emph{RE}$_2$O$_4$ (\emph{RE} = rare earth) compounds is yet limited to $\sim$ 0.9 K, which more or less hampers a complete understanding of the relevant magnetic frustrations and spin interactions. Here we report on a new frustrated member to the family, SrTb$_2$O$_4$ with a record $T_{\rm N}$ = 4.28(2) K, and an experimental study of the magnetic interacting and frustrating mechanisms by polarized and unpolarized neutron scattering. The compound SrTb$_2$O$_4$ displays an incommensurate antiferromagnetic (AFM) order with a transverse wave vector \textbf{Q}$^{\rm 0.5 K}_{\rm AFM}$ = (0.5924(1), 0.0059(1), 0) albeit with partially-ordered moments, 1.92(6) $μ_{\rm B}$ at 0.5 K, stemming from only one of the two inequivalent Tb sites mainly by virtue of their different octahedral distortions. The localized moments are confined to the \emph{bc} plane, 11.9(66)$^\circ$ away from the \emph{b} axis probably by single-ion anisotropy. We reveal that this AFM order is dominated mainly by dipole-dipole interactions and disclose that the octahedral distortion, nearest-neighbour (NN) ferromagnetic (FM) arrangement, different next NN FM and AFM configurations, and in-plane anisotropic spin correlations are vital to the magnetic structure and associated multiple frustrations. The discovery of the thus far highest AFM transition temperature renders SrTb$_2$O$_4$ a new friendly frustrated platform in the family for exploring the nature of magnetic interactions and frustrations.

preprint2014arXiv

Magnetization, crystal structure and anisotropic thermal expansion of single-crystal SrEr2O4

The magnetization, crystal structure, and thermal expansion of a nearly stoichiometric Sr$_{1.04(3)}$Er$_{2.09(6)}$O$_{4.00(1)}$ single crystal have been studied by PPMS measurements and in-house and high-resolution synchrotron X-ray powder diffraction. No evidence was detected for any structural phase transitions even up to 500 K. The average thermal expansions of lattice constants and unit-cell volume are consistent with the first-order Grüneisen approximations taking into account only the phonon contributions for an insulator, displaying an anisotropic character along the crystallographic \emph{a}, \emph{b}, and \emph{c} axes. Our magnetization measurements indicate that obvious magnetic frustration appears below $\sim$15 K, and antiferromagnetic correlations may persist up to 300 K.

preprint2012arXiv

Fundamental Issues and Problems in the Realization of Memristors

In 2008, researchers at the Hewlett-Packard (HP) laboratories claimed to have found an analytical physical model for a genuine memristor device [1]. The model is considered for a thin TiO_2 film containing a region which is highly self-doped with oxygen vacancies and a region which is less doped, i.e., a single-phase material with a built-in chemical inhomogeneity sandwiched between two platinum electrodes. On base of the proposed model, Strukov et al. [1] were able to obtain the characteristic dynamical state equation and current-voltage relation for a genuine memristor. However, some fundamental facts of electrochemistry have been overlooked by the authors while putting forward their model, namely the coupling of diffusion currents at the boundary between both regions. The device will operate for a certain time like a "chemical capacitor" until the chemical inhomogeneity is balanced out, thus violating the essential requirement on a genuine memristor, the so-called "no energy discharge property". Moreover, the dynamical state equation for the HP-memristor device must fail as this relation violates by itself Landauer's principle of the minimum energy costs for information processing. Maybe, such an approach might be upheld if one introduces an additional prerequisite by specifying the minimum amount of electric power input to the device which is required to continuously change internal, physical states of the considered system. However, we have reasonable doubts with regard to this.