Signature of multilayer graphene strain-controlled domain walls in quantum Hall effect
Domain walls, topological defects that define the frontier between regions of different stacking in multilayer graphene, have proved to host exciting physics. The ability of tuning these topological defects in-situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate through a MEMS (micro-electromechanical system) actuator and magnetoresistance measurements the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers these topological defects, manifested as new quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Our findings are supported by theoretical calculations and constitute the first indication of the in-situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way to the use of reversible topological defects in electronic applications.