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Researcher profile

Patrick K. Schelling

Patrick K. Schelling contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Analysis of ballistic transport and resonance in the $α$-Fermi-Pasta-Ulam-Tsingou model

Ballistic transport and resonance phenomena are elucidated in the one-dimensional $α$-Fermi-Pasta-Ulam-Tsingou (FPUT) model using an approach of computing thermal response functions. The existence of periodic oscillations in spatially sinusoidal temperature profiles seen in previous studies is confirmed. However, the results obtained using response functions enable a more complete understanding. In particular, it is shown that resonance involves beats between normal modes which tend to reinforce in a one-dimensional chain. Anharmonic scattering acts to destroy phase coherence across the statistical ensemble, and with increasing anharmonicity, transport is driven towards the diffusive regime. These results provide additional insight into anomalous heat transport in low-dimensional systems. Normal-mode scattering is also explored using time correlation functions. Interestingly, these calculations, in addition to demonstrating loss of phase coherence across an ensemble of simulations, appear to show evidence of so-called q-breathers in conditions of strong anharmonicity. Finally, we describe how the approach outlined here could be developed to include quantum statistics and also also first-principles estimates of phonon scattering rates to elucidate second sound and ballistic transport in realistic materials at low temperatures.

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preprint2022arXiv

Dissipation and adhesion hysteresis between (010) forsterite surfaces using molecular-dynamics simulation and the Jarzynski equality

Dissipation and adhesion are important in many areas of materials science, including friction and lubrication, cold spray deposition, and micro-electromechanical systems (MEMS). Another interesting problem is the adhesion of mineral grains during the early stages of planetesimal formation in the early solar system. Molecular-dynamics (MD) simulation has often been used to elucidate dissipative properties, most often in the simulation of sliding friction. In this paper, we demonstrate how the reversible and irreversible work associated with interactions between planar surfaces can be calculated using the dynamical contact simulation approach based on MD and empirical potentials. Moreover, it is demonstrated how the approach can obtain the free-energy $ΔA(z)$ as a function of separation between two slabs using the Jarzynksi equality applied to an ensemble of trajectories which deviate significantly from equilibrium. Furthermore, the dissipative work can also be obtained using this method without the need to compute an entire cycle from approach to retraction. It is expected that this technique might be used to efficiently compute dissipative properties which might enable the use of more accurate approaches including density-functional theory. In this paper, we present results obtained for forsterite surfaces both with and without MgO-vacancy surface defects. It is shown that strong dissipation is possible when MgO-vacancy defects are present. The mechanism for strong dissipation is connected to the tendency of less strongly-bound surface units to undergo large displacements including mass transfer between the two surfaces. Systems with strong dissipation tend to exhibit a long-tailed distribution rather than the Gaussian distribution often anticipated in near-equilibrium applications of the JE.

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preprint2020arXiv

Epitaxial metals for interconnects beyond Cu

The experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function of thickness is modeled using the semiclassical model of Fuchs-Sondheimer. The model fits show that the resistivity of Ru would cross below that for Co at a thickness of approximately 20 nm. For Ru films with thicknesses above 20 nm, transmission electron microscopy evidences threading and misfit dislocations, stacking faults and deformation twins. Exposure of Co films to ambient air, and the deposition of oxide layers of SiO2, MgO, Al2O3 and Cr2O3 on Ru degrade the surface specularity of the metallic layer. However, for the Ru films, annealing in a reducing ambient restores the surface specularity. Epitaxial electrochemical deposition of Co on epitaxially-deposited Ru layers is used as an example to demonstrate the feasibility of generating epitaxial interconnects for back-end of line structures. An electron transport model based on a tight-binding approach is described, with Ru interconnects used an example. The model allows conductivity to be computed for structures comprising large ensembles of atoms (10^5-10^6), scales linearly with system size and can also incorporate defects.

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