Neutral atom scattering based mapping of atomically thin layers
Imaging surfaces using low energy neutral atom scattering is a relatively recent development in the field of microscopy. In this work we demonstrate that this technique is sensitive enough to distinguish films as thin as a single monolayer from the underlying substrate. Using collimated beams of He and Kr atoms as an incident probe on MoS films grown on SiO/Si substrate, we observe systematic changes in the scattered atom flux which allows us to map the thin MoS films. Measurements carried out by varying incidence energy using both He and Kr provides insights into the details of atom-surface collision dynamics and its role in contrast generation.