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Researcher profile

Krishna Rani Sahoo

Krishna Rani Sahoo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phphysics.atom-phphysics.chem-ph

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Published work

2 published item(s)

preprint2022arXiv

Neutral atom scattering based mapping of atomically thin layers

Imaging surfaces using low energy neutral atom scattering is a relatively recent development in the field of microscopy. In this work we demonstrate that this technique is sensitive enough to distinguish films as thin as a single monolayer from the underlying substrate. Using collimated beams of He and Kr atoms as an incident probe on MoS$_2$ films grown on SiO$_2$/Si substrate, we observe systematic changes in the scattered atom flux which allows us to map the thin MoS$_2$ films. Measurements carried out by varying incidence energy using both He and Kr provides insights into the details of atom-surface collision dynamics and its role in contrast generation.

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preprint2022arXiv

On the Existence of Photoluminescence and Room-Temperature Spin Polarization in Ambipolar V doped MoS$_2$ Monolayers

Opto-spintronics is an emerging field where ultra-thin magnetic-semiconductors having high spin-valley coupling play an important role. Here, we demonstrate substitutional vanadium (V) doping in MoS$_2$ lattice in different extent, leading to the coexistence of photoluminescence (PL), valleypolarization (~32%), and valley splitting (~28 meV shift in PL with helicity $σ^+$ and $σ^-$ of light excitation). A large V doping causes semiconductor to metal transition in MoS$_2$ but with medium level causing the existence of photoluminescence with high spin polarization. The ambipolar nature of medium level V doped MoS$_2$ is shown here indicating its potential as an opto-electronic material. The presence of V-dopants and their different level of content are proven by both spectroscopic and microscopic methods.A detailed temperature and power dependent photoluminescence studies along with density functional theory-based calculations in support unravels the emergence of the co-existence of spin-valley coupling and photoluminescence. This study shows the potential of doping MoS$_2$ for deriving new materials for next generation room temperature opto-spintronics.

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