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Parinita Nene

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Published work

2 published item(s)

preprint2014arXiv

Coupling of Plasmon Modes in Graphene Microstructures

A variety of different graphene plasmonic structures and devices have been proposed and demonstrated experimentally. Plasmon modes in graphene microstructures interact strongly via the depolarization fields. An accurate quantitative description of the coupling between plasmon modes is required for designing and understanding complex plasmonic devices. Drawing inspiration from microphotonics, we present a coupled-mode theory for graphene plasmonics in which the plasmon eigenmodes of a coupled system are expressed in terms of the plasmon eigenmodes of its uncoupled sub-systems. The coupled-mode theory enables accurate computation of the coupling between the plasmon modes and of the resulting dynamics. We compare theory with experiments performed on the plasmon modes in coupled arrays of graphene strips. In experiments, we tune the coupling by changing the spacing between the graphene strips in the array. Our results show that the coupling parameters obtained from the coupled-mode theory and the plasmon frequency changes resulting from this coupling agree very well with experiments. The work presented here provides a framework for designing and understanding coupled graphene plasmonic structures.

preprint2014arXiv

High Intrinsic Mobility and Ultrafast Carrier Dynamics in Multilayer Metal Dichalcogenide MoS2

The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by optical-pump terahertz-probe spectroscopy. We find mobilities in this material approaching 4200 cm2/Vs at low temperatures. The temperature dependence of scattering indicates that the mobility, an order of magnitude larger than previously reported for MoS2, is intrinsically limited by acoustic phonon scattering at THz frequencies. Our measurements of carrier relaxation reveal picosecond cooling times followed by recombination lasting tens of nanoseconds and dominated by Auger scattering into defects. Our results provide a useful context in which to understand and evaluate the performance of MoS2-based electronic and optoelectronic devices.