Researcher profile

Paolo Carniti

Paolo Carniti contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

ALDO2, a multi-function rad-hard linear regulator for SiPM-based HEP detectors

ALDO2 is a multi-function, adjustable, low dropout linear regulator designed in onsemi I3T80 0.35~$μ$m HV CMOS technology for use in HEP detectors that adopt silicon photomultipliers (SiPMs). The chip features four independent regulators, two low voltage channels (max 3.3 V) used to filter and stabilize the power supply of front-end chips, and two HV channels (max 70 V), specifically designed to provide the bias voltage to arrays of SiPMs. Each regulator can be independently shut down and is protected for over-current and over-temperature. The HV regulators also implement a circuit to monitor the bias current of the SiPM arrays, allowing to perform I-V curves and thus to fine-tune the working point of the SiPM arrays during the detector lifetime. The chip adopts radiation hardening techniques and has been fully qualified up to a TID of 20 Mrad, a 1-MeV-equivalent neutron fluence of $10^{15}$ cm$^{-2}$, and with heavy ions up to 40 MeV cm$^2$ mg$^{-1}$ LET and $10^{10}$ cm$^{-2}$ cumulative fluence. The chip will be installed in two CMS detectors in the HL-LHC phase, the Barrel Timing Detector (BTL) and the High Granularity Calorimeter (HGCAL).

preprint2012arXiv

CLARO-CMOS, a very low power ASIC for fast photon counting with pixellated photodetectors

The CLARO-CMOS is an application specific integrated circuit (ASIC) designed for fast photon counting with pixellated photodetectors such as multi-anode photomultiplier tubes (Ma-PMT), micro-channel plates (MCP), and silicon photomultipliers (SiPM). The first prototype has four channels, each with a charge sensitive amplifier with settable gain and a discriminator with settable threshold, providing fast hit information for each channel independently. The design was realized in a long-established, stable and inexpensive 0.35 um CMOS technology, and provides outstanding performance in terms of speed and power dissipation. The prototype consumes less than 1 mW per channel at low rate, and less than 2 mW at an event rate of 10 MHz per channel. The recovery time after each pulse is less than 25 ns for input signals within a factor of 10 above threshold. Input referred RMS noise is about 7.7 ke^- (1.2 fC) with an input capacitance of 3.3 pF. Thanks to the low noise and high speed, a timing resolution down to 10 ps RMS was measured for typical photomultiplier signals of a few million electrons, corresponding to the single photon response for these detectors.