Source author record

Paola Gava

Paola Gava appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci

Catalog footprint

What is connected

3works

2topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2014arXiv

Two-dimensional analysis of the double-resonant 2D Raman mode in bilayer graphene

By computing the double-resonant Raman scattering cross-section completely from first principles and including electron-electron interaction at the $GW$ level, we unravel the dominant contributions for the double-resonant 2D-mode in bilayer graphene. We show that, in contrast to previous works, the so-called inner processes are dominant and that the 2D-mode lineshape is described by three dominant resonances around the $K$ point. We show that the splitting of the TO phonon branch in $Γ-K$ direction, as large as 12 cm$^{-1}$ in $GW$ approximation, is of great importance for a thorough description of the 2D-mode lineshape. Finally, we present a method to extract the TO phonon splitting and the splitting of the electronic bands from experimental data.

preprint2011arXiv

First principles study of iron-based molecule grafted on graphene

Motivated by recent experimental studies on single molecular magnets grafted on graphene and single walled carbon nanotubes, we investigate the structural, electronic, and magnetic properties of an iron based magnetic molecule grafted on a graphene sheet using \textit{ab initio} calculations. In particular, the induced charge transfer and magnetization are described in terms of the coupling between the molecule and the graphene orbitals. This interaction and its effects on graphene electronic properties are determined and discussed in view of the potential utilization of graphene in spintronics.

preprint2009arXiv

Ab-initio study of gap opening and screening effects in gated bilayer graphene

The electronic properties of doped bilayer graphene in presence of bottom and top gates have been studied and characterized by means of Density Functional Theory calculations. Varying independently the bottom and top gates it is possible to control separately the total doping charge on the sample, and the average external electric field acting on the bilayer. We show that, at fixed doping level, the band gap at the K point in the Brillouin zone depends linearly on the average electric field, whereas the corresponding proportionality coefficient has a non-monotonic dependence on doping. We find that the DFT-calculated band gap at K, for small doping levels, is roughly half of the band gap obtained with standard Tight Binding approach. We show that this discrepancy arises from an underestimate, in the TB model, of the screening of the system to the external electric field. In particular, on the basis of our DFT results we observe that, when the bilayer graphene is in presence of an external electric field, both an interlayer and an intralayer screening occur. Only the interlayer screening is included in TB calculations, while both screenings are fundamental for the description of the band gap opening. We finally provide a general scheme to obtain the full band structure of the gated bilayer graphene, for an arbitrary value of the external electric field and of the doping.