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Michele Lazzeri

Michele Lazzeri contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2012arXiv

Hidden polymorphs drive the vitrification in B2O3

Understanding the conditions which favor crystallisation or vitrification of liquids has been a long-standing scientific problem. Another connected, and not yet well understood question is the relationship between the glassy and the various possible crystalline forms a system may adopt. In this context, B2O3 is a puzzling case of study since i) it is one of the best glass-forming systems despite an apparent lack of low-pressure polymorphism ii) it vitrifies in a glassy form abnormally different from the only known crystalline phase at ambient pressure iii) it never crystallises from the melt unless pressure is applied, an intriguing behaviour known as the crystallisation anomaly. Here, by means of ab-initio calculations, we discover the existence of novel B2O3 crystalline polymorphs with structural properties similar to the glass and formation energies comparable to the known ambient crystal. The resulting configurational degeneracy drives the system vitrification at ambient pressure. The degeneracy is lifted under pressure, unveiling the origin of the crystallisation anomaly. This work reconciles the behaviour of B2O3 with that from other glassy systems and reaffirms the role played by polymorphism in a system's ability to vitrify. Some of the predicted crystals are cage-like materials entirely made of three-fold rings, opening new perspectives for the synthesis of boron-based nanoporous materials.

preprint2011arXiv

Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands

We calculate the double resonant (DR) Raman spectrum of graphene, and determine the lines associated to both phonon-defect processes, and two-phonons ones. Phonon and electronic dispersions reproduce calculations based on density functional theory corrected with GW. Electron-light, -phonon, and -defect scattering matrix elements and the electronic linewidth are explicitly calculated. Defect-induced processes are simulated by considering different kind of idealized defects. For an excitation energy of $ε_L=2.4$ eV, the agreement with measurements is very good and calculations reproduce: the relative intensities among phonon-defect or among two-phonon lines; the measured small widths of the D, $D'$, 2D and $2D'$ lines; the line shapes; the presence of small intensity lines in the 1800, 2000 cm$^{-1}$ range. We determine how the spectra depend on the excitation energy, on the light polarization, on the electronic linewidth, on the kind of defects and on their concentration. According to the present findings, the intensity ratio between the $2D'$ and 2D lines can be used to determine experimentally the electronic linewidth. The intensity ratio between the $D$ and $D'$ lines depends on the kind of model defect, suggesting that this ratio could possibly be used to identify the kind of defects present in actual samples. Charged impurities outside the graphene plane provide an almost undetectable contribution to the Raman signal.

preprint2010arXiv

Clar's Theory, STM Images, and Geometry of Graphene Nanoribbons

We show that Clar's theory of the aromatic sextet is a simple and powerful tool to predict the stability, the π-electron distribution, the geometry, the electronic/magnetic structure of graphene nanoribbons with different hydrogen edge terminations. We use density functional theory to obtain the equilibrium atomic positions, simulated scanning tunneling microscopy (STM) images, edge energies, band gaps, and edge-induced strains of graphene ribbons that we analyze in terms of Clar formulas. Based on their Clar representation, we propose a classification scheme for graphene ribbons that groups configurations with similar bond length alternations, STM patterns, and Raman spectra. Our simulations show how STM images and Raman spectra can be used to identify the type of edge termination.

preprint2010arXiv

Doped graphene as tunable electron-phonon coupling material

We present a new way to tune the electron-phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K, acquires a strong dependency on the doping level due to electron-electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multi-layer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through the external control of the EPC.