BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Pablo Stoliar

Pablo Stoliar appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hall

Catalog footprint

What is connected

4works
3topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2014arXiv

Resistive switching phenomena in TiOx nanoparticle layers for memory applications

Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO_x nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Enhanced and continuous electrostatic carrier doping on the SrTiO$_{3}$ surface

Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here we introduce the Parylene-C/Ta$_{2}$O$_{5}$ hybrid gate insulator and fabricate FET devices on single-crystalline SrTiO$_{3}$, which has been regarded as a bedrock material for oxide electronics. The gate insulator accumulates up to $\sim10^{13}$cm$^{-2}$ carriers, while the field-effect mobility is kept at 10\,cm$^2$/Vs even at room temperature. Further to the exceptional performance of our devices, the enhanced compatibility of high carrier density and high mobility revealed the mechanism for the long standing puzzle of the distribution of electrostatically doped carriers on the surface of SrTiO$_{3}$. Namely, the formation and continuous evolution of field domains and current filaments.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Resistive switching induced by electronic avalanche breakdown in GaTa$_4$Se$_{8-x}$Te$_x$ narrow gap Mott Insulators

Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow gap Mott insulators GaTa$_4$Se$_{8-x}$Te$_x$. We find that the I-V characteristics and the magnitude of the threshold electric field (E$_{th}$) do not correspond to a Zener breakdown, but rather to an avalanche breakdown. E$_{th}$ increases as a power law of the Mott Hubbard gap (E$_g$), in surprising agreement with the universal law E$_{th}$ $\propto$E$_g$$^{2.5}$ reported for avalanche breakdown in semiconductors. However, the delay time for the avalanche that we observe in Mott insulators is over three orders of magnitude longer than in conventional semiconductors. Our results suggest that the electric field induces local insulator-to-metal Mott transitions that create conductive domains which grow to form filamentary paths across the sample.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Universal electric-field-driven resistive transition in narrow-gap Mott insulators

One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott insulator-to-metal transition (IMT), which is driven by strong electronic correlation effects, holds the promise of a commutation speed set by a quantum transition, and with negligible power dissipation. In this context, one possible route to control the Mott transition is to electrostatically dope the systems using strong dielectrics, in FET-like devices. Another possibility is through resistive switching, that is, to induce the insulator-to-metal transition by strong electric pulsing. This action brings the correlated system far from equilibrium, rendering the exact treatment of the problem a difficult challenge. Here, we show that existing theoretical predictions of the off-equilibrium manybody problem err by orders of magnitudes, when compared to experiments that we performed on three prototypical narrow gap Mott systems V2-xCrxO3, NiS2-xSex and GaTa4Se8, and which also demonstrate a striking universality of this Mott resistive transition (MRT). We then introduce and numerically study a model based on key theoretically known physical features of the Mott phenomenon in the Hubbard model. We find that our model predictions are in very good agreement with the observed universal MRT and with a non-trivial timedelay electric pulsing experiment, which we also report. Our study demonstrates that the MRT can be associated to a dynamically directed avalanche.

0 citations0 reviewsNo code linkedOpen access