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P. Zahn

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

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cond-mat.mtrl-scicond-mat.mes-hall

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10 publications

preprint2013arXiv

Signature of the topological surface state in the thermoelectric properties of Bi2_2Te3_3

We present ab initio electronic structure calculations based on density functional theory for the thermoelectric properties of Bi2_2Te3_3 films. Conductivity and thermopower are computed in the diffusive limit of transport based on the Boltzmann equation. Bulk and surface contribution to the transport coefficients are separated by a special projection technique. As a result we show clear signatures of the topological surface state in the thermoelectric properties.

Open access
preprint2012arXiv

Lorenz function of Bi2_{2}Te3_{3}/Sb2_{2}Te3_{3} superlattices

Combining first principles density functional theory and semi-classical Boltzmann transport, the anisotropic Lorenz function was studied for thermoelectric Bi2_{2}Te3_{3}/Sb2_{2}Te3_{3} superlattices and their bulk constituents. It was found that already for the bulk materials Bi2_{2}Te3_{3} and Sb2_{2}Te3_{3}, the Lorenz function is not a pellucid function on charge carrier concentration and temperature. For electron-doped Bi2_{2}Te3_{3}/Sb2_{2}Te3_{3} superlattices large oscillatory deviations for the Lorenz function from the metallic limit were found even at high charge carrier concentrations. The latter can be referred to quantum well effects, which occur at distinct superlattice periods.

Open access
preprint2012arXiv

Thermoelectric transport in Bi2Te3/Sb2Te3\text{Bi}_2\text{Te}_3/\text{Sb}_2\text{Te}_3 superlattices

The thermoelectric transport properties of Bi2Te3/Sb2Te3\text{Bi}_2\text{Te}_3/\text{Sb}_2\text{Te}_3superlattices are analyzed on the basis of first-principles calculations and semi-classical Boltzmann theory. The anisotropy of the thermoelectric transport under electron and hole-doping was studied in detail for different superlattice periods at changing temperature and charge carrier concentrations. A clear preference for thermoelectric transport under hole-doping, as well as for the in-plane transport direction was found for all superlattice periods. At hole-doping the electrical transport anisotropies remain bulk-like for all investigated systems, while under electron-doping quantum confinement leads to strong suppression of the cross-plane thermoelectric transport at several superlattice periods. In addition, insights on the Lorenz function, the electronic contribution to the thermal conductivity and the resulting figure of merit are given.

Open access
preprint2012arXiv

Thermoelectric transport in strained Si and Si/Ge heterostructures

The anisotropic thermoelectric transport properties of bulk silicon strained in [111]-direction were studied by detailed first-principles calculations focussing on a possible enhancement of the power factor. Electron as well as hole doping were examined in a broad doping and temperature range. At low temperature and low doping an enhancement of the power factor was obtained for compressive and tensile strain in the electron-doped case and for compressive strain in the hole-doped case. For the thermoelectrically more important high temperature and high doping regime a slight enhancement of the power factor was only found under small compressive strain with the power factor overall being robust against applied strain. To extend our findings the anisotropic thermoelectric transport of an [111]-oriented Si/Ge superlattice was investigated. Here, the cross-plane power factor under hole-doping was drastically suppressed due to quantum-well effects, while under electron-doping an enhanced power factor was found. With that, we state a figure of merit of ZT=0.2=0.2 and ZT=1.4=1.4 at $T=\unit[300]{K}$ and $T=\unit[900]{K}$ for the electron-doped [111]-oriented Si/Ge superlattice. All results are discussed in terms of band structure features.

Open access
preprint2011arXiv

Electronic structure and transport anisotropy of Bi2Te3 and Sb2Te3

On the basis of detailed ab initio studies the influence of strain on the anisotropy of the transport distribution of the thermoelectrics Bi2_2Te3_3 and Sb2_2Te3_3 was investigated. Both tellurides were studied in their own, as well as in their co-partners lattice structure to gain insight to the electrical transport in epitaxial heterostructures composed of both materials. It is shown, that the anisotropy of the transport distribution overestimates the experimental findings for Bi2_2Te3_3, implying anisotropic scattering effects. An increase of the in-plane lattice constant leads to an enhancement of the transport anisotropy for pp-doping, whereas the opposite occurs for nn-doping. The recent findings and special features of the transport distribution are discussed in detail in relation to the topology of the band structures.

Open access
preprint2011arXiv

Influence of strain on anisotropic thermoelectric transport of Bi2_2Te3_3 and Sb2_2Te3_3

On the basis of detailed first-principles calculations and semi-classical Boltzmann transport, the anisotropic thermoelectric transport properties of Bi2_2Te3_3 and Sb2_2Te3_3 under strain were investigated. It was found that due to compensation effects of the strain dependent thermopower and electrical conductivity, the related powerfactor will decrease under applied in-plane strain for Bi2_2Te3,whilebeingstableforSb_3, while being stable for Sb_2TeTe_3.Aclearpreferenceforthermoelectrictransportunderhole−doping,aswellasforthein−planetransportdirectionwasfoundforbothtellurides.Incontrasttotheelectricalconductivityanisotropy,theanisotropyofthethermopowerwasalmostrobustunderappliedstrain.TheassumptionofananisotropicrelaxationtimeforBi. A clear preference for thermoelectric transport under hole-doping, as well as for the in-plane transport direction was found for both tellurides. In contrast to the electrical conductivity anisotropy, the anisotropy of the thermopower was almost robust under applied strain. The assumption of an anisotropic relaxation time for Bi_2TeTe_3$ suggests, that already in the single crystalline system strong anisotropic scattering effects should play a role.

Open access
preprint2011arXiv

On calculating the Berry curvature of Bloch electrons using the KKR method

We propose and implement a particularly effective method for calculating the Berry curvature arising from adiabatic evolution of Bloch states in wave vector k space. The method exploits a unique feature of the Korringa-Kohn-Rostoker (KKR) approach to solve the Schrödinger or Dirac equations. Namely, it is based on the observation that in the KKR method k enters the calculation via the structure constants which depend only on the geometry of the lattice but not the crystal potential. For both the Abelian and non-Abelian Berry curvature we derive an analytic formula whose evaluation does not require any numerical differentiation with respect to k. We present explicit calculations for Al, Cu, Au, and Pt bulk crystals.

Open access
preprint2010arXiv

Correlating transmission and local electronic structure in planar junctions: A tool for analyzing spin-dependent transport calculations

We propose to correlate transmittance maps and spectral-density maps of planar junctions, in order to analyze quantitatively and in detail spin-dependent transport calculations. Since spectral-density maps can be resolved with respect to atom, angular momentum, and spin, the resulting correlation coefficients reveal unequivocally, e.g., which layers or which orbitals determine the tunnel conductances. Our method can be used for transport calculations within the Landauer-Büttiker formalism. Its properties and features will be discussed by means of a pure bcc Fe(001) lead as well as an extensively studied Fe(001)/MgO/Fe(001) planar tunnel junction.

Open access
preprint2010arXiv

Strong influence of the complex bandstructure on the tunneling electroresistance: A combined model and ab-initio study

The tunneling electroresistance (TER) for ferroelectric tunnel junctions (FTJs) with BaTiO_{3} (BTO) and PbTiO}_{3} (PTO) barriers is calculated by combining the microscopic electronic structure of the barrier material with a macroscopic model for the electrostatic potential which is caused by the ferroelectric polarization. The TER ratio is investigated in dependence on the intrinsic polarization, the chemical potential, and the screening properties of the electrodes. A change of sign in the TER ratio is obtained for both barrier materials in dependence on the chemical potential. The inverse imaginary Fermi velocity describes the microscopic origin of this effect; it qualitatively reflects the variation and the sign reversal of the TER. The quantity of the imaginary Fermi velocity allows to obtain detailed information on the transport properties of FTJs by analyzing the complex bandstructure of the barrier material.

Open access
preprint2010arXiv

Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions

We report on systematic ab-initio investigations of Co and Cr interlayers embedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on the changes of the electronic structure and the transport properties with interlayer thickness. The results of spin-dependent ballistic transport calculations reveal options to specifically manipulate the tunnel magnetoresistance ratio. The resistance area products and the tunnel magnetoresistance ratios show a monotonous trend with distinct oscillations as a function of the Cr thickness. These modulations are directly addressed and interpreted by means of magnetic structures in the Cr films and by complex band structure effects. The characteristics for embedded Co interlayers are considerably influenced by interface resonances which are analyzed by the local electronic structure.

Open access

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