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Researcher profile

P. Bose

P. Bose contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-matcond-mat.mes-hall

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Published work

4 published item(s)

preprint2010arXiv

Correlating transmission and local electronic structure in planar junctions: A tool for analyzing spin-dependent transport calculations

We propose to correlate transmittance maps and spectral-density maps of planar junctions, in order to analyze quantitatively and in detail spin-dependent transport calculations. Since spectral-density maps can be resolved with respect to atom, angular momentum, and spin, the resulting correlation coefficients reveal unequivocally, e.g., which layers or which orbitals determine the tunnel conductances. Our method can be used for transport calculations within the Landauer-Büttiker formalism. Its properties and features will be discussed by means of a pure bcc Fe(001) lead as well as an extensively studied Fe(001)/MgO/Fe(001) planar tunnel junction.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Strong influence of the complex bandstructure on the tunneling electroresistance: A combined model and ab-initio study

The tunneling electroresistance (TER) for ferroelectric tunnel junctions (FTJs) with BaTiO_{3} (BTO) and PbTiO}_{3} (PTO) barriers is calculated by combining the microscopic electronic structure of the barrier material with a macroscopic model for the electrostatic potential which is caused by the ferroelectric polarization. The TER ratio is investigated in dependence on the intrinsic polarization, the chemical potential, and the screening properties of the electrodes. A change of sign in the TER ratio is obtained for both barrier materials in dependence on the chemical potential. The inverse imaginary Fermi velocity describes the microscopic origin of this effect; it qualitatively reflects the variation and the sign reversal of the TER. The quantity of the imaginary Fermi velocity allows to obtain detailed information on the transport properties of FTJs by analyzing the complex bandstructure of the barrier material.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions

We report on systematic ab-initio investigations of Co and Cr interlayers embedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on the changes of the electronic structure and the transport properties with interlayer thickness. The results of spin-dependent ballistic transport calculations reveal options to specifically manipulate the tunnel magnetoresistance ratio. The resistance area products and the tunnel magnetoresistance ratios show a monotonous trend with distinct oscillations as a function of the Cr thickness. These modulations are directly addressed and interpreted by means of magnetic structures in the Cr films and by complex band structure effects. The characteristics for embedded Co interlayers are considerably influenced by interface resonances which are analyzed by the local electronic structure.

0 citations0 reviewsNo code linkedOpen access
preprint2002arXiv

Spin Motion in Electron Transmission through Ultrathin Ferromagnetic Films Accessed by Photoelectron Spectroscopy

Ab initio and model calculations demonstrate that the spin motion of electrons transmitted through ferromagnetic films can be analyzed in detail by means of angle- and spin-resolved core-level photoelectron spectroscopy. The spin motion appears as precession of the photoelectron spin polarization around and as relaxation towards the magnetization direction. In a systematic study for ultrathin Fe films on Pd(001) we elucidate its dependence on the Fe film thickness and on the Fe electronic structure. In addition to elastic and inelastic scattering, the effect of band gaps on the spin motion is addressed in particular.

0 citations0 reviewsNo code linkedOpen access