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P. Turban

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cond-mat.mtrl-sci

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preprint2020arXiv

Band structure of the epitaxial Fe/MgO/GaAs(001) tunnel junction studied by X-ray and ultraviolet photoelectron spectroscopy

The electronic band structure in the epitaxial Fe/MgO/GaAs(001) tunnel junction has been studied by X-ray and ultraviolet photoelectron spectroscopy measurements. The Schottky barrier height (SBH) of Fe on MgO/GaAs heterostructure is determined to be 3.3+-0.1eV, which sets the Fe Fermi level about 0.3eV above the GaAs valence band maximum. This SBH is also exactly the same as that measured from Fe on MgO monocrystal. After Fe deposition, no band bending change is observed in MgO and GaAs underlayers. On the contrary, Au and Al deposition lead to clear variation of the band bending in both MgO and GaAs layers. This effect is analyzed as a fingerprint of defects states at the MgO/GaAs interface.

preprint2020arXiv

Zinc-Blende group III-V/group IV epitaxy: importance of the miscut

Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then inferred how the antiphase domain distribution mean phase and mean lateral length are affected by the miscut. An experimental confirmation is given through the comparison of antiphase domain distributions in GaP and GaSb/AlSb samples grown on nominal and vicinal Si substrates. The antiphase domain burying step of GaP/Si samples is then observed at the atomic scale by scanning tunneling microscopy. The steps arising from the miscut allow growth rate imbalance between the two phases of the crystal and the growth conditions can deeply modify the imbalance coefficient, as illustrated with GaAs/Si. We finally explain how a monodomain III-V semiconductor configuration can be achieved even on low miscut substrates.

preprint2007arXiv

Elastic relaxation during 2D epitaxial growth: a study of in-plane lattice spacing oscillations

The purpose of this paper is to report some new experimental and theoretical results about the analysis of in-plane lattice spacing oscillations during two-dimensional (2D) homo and hetero epitaxial growth. The physical origin of these oscillations comes from the finite size of the strained islands. The 2D islands may thus relax by their edges, leading to in-plane lattice spacing oscillations during the birth and spread of these islands. On the one hand, we formulate the problem of elastic relaxation of a coherent 2D epitaxial deposits by using the concept of point forces and demonstrate that the mean deformation in the islands exhibits an oscillatory behaviour. On the other hand, we calculate the intensity diffracted by such coherently deposited 2D islands by using a mean model of a pile-up of weakly deformed layers. The amplitude of in-plane lattice spacing oscillations is found to depend linearly on the misfit and roughly linearly on the nucleation density. We show that the nucleation density may be approximated from the full-width at half maximum of the diffracted rods at half coverages. The predicted dependence of the in-plane lattice spacing oscillations amplitude with the nucleation density is thus experimentally verified on V/Fe(001), Mn/Fe(001), Ni/Fe(001), Co/Cu(001) and V/V(001).