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P. S. Patil

P. S. Patil appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Emerging Technologiescond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2016arXiv

A Processing In-Memory Realization Using QCA: Proposal and Implementation

Processing in Memory (PIM) is a computing paradigm that promises enormous gain in processing speed by eradicating latencies in the typical von Neumann architecture. It has gained popularity owing to its throughput by embedding storage and computation of data in a single unit. We portray implementation of Akers array architecture endowed with PIM computation using Quantum-dot Cellular Automata (QCA). We present the proof of concept of PIM with its realization in the QCA designer paradigm. We illustrate implementation of Ex-OR gate with the help of QCA based Akers Array and put forth many interesting potential possibilities.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Investigating Reliability Aspects of Memristor based RRAM with Reference to Write Voltage and Frequency

In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write voltage from 0.2V to 1.2V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz the corresponding effects on memory window, Low Resistance State (LRS) and High Resistance State (HRS) have been reported. Thus the lifetime (τ) reliability analysis of memristor based RRAM is carried out using above results. It is found that, the HRS is independent of write voltage, whereas LRS shows dependency on write voltage and frequency. The simulation results showcase that the memristor possess higher memory window and lifetime (τ) in the higher voltage with lower frequency region, which has been attributed to the fewer data losses in the memory architecture.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Investigating the Temperature Effects on Resistive Random Access Memory (RRAM) Devices

In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM.

0 citations0 reviewsNo code linkedOpen access