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P. Roca i Cabarrocas

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cond-mat.mtrl-sci cond-mat.other physics.optics physics.plasm-ph

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preprint2013arXiv

Stochastic Theory of Dust-Grain Charging in Low-Pressure Plasmas

Charging of dust grains in low-pressure plasmas is reviewed critically. A theory based on the Fokker-Planck equation and orbital motion limited approximation is proposed. The theory predicts that dust grains can acquire a positive charge in low-pressure electropositive plasmas having a sufficiently high plasma potential, in agreement with experimental observations. It is also shown that variations in the plasma potential (electron temperature) can lead to spatial regions in which grains have opposite charges.

preprint2010arXiv

Absorbing photonic crystals for thin film photovoltaics

The absorption of thin hydrogenated amorphous silicon layers can be efficiently enhanced through a controlled periodic patterning. Light is trapped through coupling with photonic Bloch modes of the periodic structures, which act as an absorbing planar photonic crystal. We theoretically demonstrate this absorption enhancement through one or two dimensional patterning, and show the experimental feasibility through large area holographic patterning. Numerical simulations show over 50% absorption enhancement over the part of the solar spectrum comprised between 380 and 750nm. It is experimentally confirmed by optical measurements performed on planar photonic crystals fabricated by laser holography and reactive ion etching.

preprint2010arXiv

Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analysed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain, but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon.

preprint2007arXiv

Low temperature conduction behavior in highly crystallized undoped microcrystalline silicon thin films

The temperature dependence of dark conductivity at low temperatures (300-15 K) was studied on a wide microstructural range of well-characterized highly crystallized single phase undoped microcrystalline silicon samples. Our study reveals two different temperature dependences in films having different microstructures. A T^(-0.5) dependence of dark conductivity supporting tunneling of carriers between neighboring conducting crystals, similar to percolation-hopping model proposed for metal-insulator composite systems, is seen in microcrystalline silicon films that are fully crystallized with tightly packed large columnar grains and negligible density deficit. A T^(-0.25)dependence of dark conductivity supporting variable range hopping model with an exponential tail state distribution in the gap is seen in microcrystalline silicon films having mostly small crystalline grains, low degree of conglomeration and relatively higher density deficit. The correlation between the microstructural attributes and conductivity behavior is discussed by analyzing the physical plausibility of the hopping parameters and material properties derived by applying different transport models.