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Researcher profile

P. Rakyta

P. Rakyta contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2015arXiv

Band bending at the surface of Bi$_2$Se$_3$ studied from first principles

The band bending (BB) effect on the surface of the second-generation topological insulators implies a serious challenge to design transport devices. The BB is triggered by the effective electric field generated by charged impurities close to the surface and by the inhomogeneous charge distribution of the occupied surface states. Our self-consistent calculations in the Korringa-Kohn-Rostoker framework showed that in contrast to the bulk bands, the spectrum of the surface states is not bent at the surface. In turn, it is possible to tune the energy level of the Dirac point via the deposited surface dopants. In addition, the electrostatic modifications induced by the charged impurities on the surface induce long range oscillations in the charge density. For dopants located beneath the surface, however, these oscillations become highly suppressed. Our findings are in good agreement with recent experiments, however, our results indicate that the concentration of the surface doping cannot be estimated from the energy shift of the Dirac cone within the scope of the effective continuous model for the protected surface states.

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preprint2015arXiv

Finite-size effects on the minimal conductivity in graphene with Rashba spin-orbit coupling

We study theoretically the minimal conductivity of monolayer graphene in the presence of Rashba spin-orbit coupling. The Rashba spin-orbit interaction causes the low-energy bands to undergo trigonal-warping deformation and for energies smaller than the Lifshitz energy, the Fermi circle breaks up into parts, forming four separate Dirac cones. We calculate the minimal conductivity for an ideal strip of length $L$ and width $W$ within the Landauer--Büttiker formalism in a continuum and in a tight binding model. We show that the minimal conductivity depends on the relative orientation of the sample and the probing electrodes due to the interference of states related to different Dirac cones. We also explore the effects of finite system size and find that the minimal conductivity can be lowered compared to that of an infinitely wide sample.

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preprint2015arXiv

Protected edge states in silicene antidots and dots in magnetic field

Silicene systems, due to the buckled structure of the lattice, manifest remarkable intrinsic spin-orbit interaction triggering a topological phase transition in the low-energy regime. Thus, we found that protected edge states are present in silicene antidots and dots, being polarized in valley-spin pairs. We have also studied the effect of the lattice termination on the properties of the single electron energy levels and electron density distribution of silicene antidots and dots situated in a perpendicular magnetic field. Our calculations confirmed that the topological edge states are propagating over the perimeter of the antidot/dot for both ideal or realistic edge termination containing roughness on the atomic length scale. The valley polarization and the slope of the energy line as a function of the magnetic field is, however, reduced when the antidot or dot has a rough edge.

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preprint2014arXiv

Emergence of bound states in ballistic magnetotransport of graphene antidots

An experimental method for detection of bound states around an antidot formed from a hole in a graphene sheet is proposed by measuring the ballistic two terminal conductances. In particularly, we consider the effect of bound states formed by magnetic field on the two terminal conductance and show that one can observe Breit-Wigner like resonances in the conductance as a function of the Fermi level close to the energies of the bound states. In addition, we develop a new numerical method in which the computational effort is proportional to the linear dimensions, instead of the area of the scattering region beeing typical for the existing numerical recursive Green's function method.

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preprint2012arXiv

Electronic standing waves on the surface of the topological insulator Bi2Te3

A line defect on a metallic surface induces standing waves in the electronic local density of states (LDOS). Asymptotically far from the defect, the wave number of the LDOS oscillations at the Fermi energy is usually equal to the distance between nesting segments of the Fermi contour, and the envelope of the LDOS oscillations shows a power-law decay as moving away from the line defect. Here, we theoretically analyze the LDOS oscillations close to a line defect on the surface of the topological insulator Bi2Te3, and identify an important pre-asymptotic contribution with wave number and decay characteristics markedly different from the asymptotic contributions. Wave numbers characterizing the pre-asymptotic LDOS oscillations are in good agreement with recent data from scanning tunneling microscopy experiments [Phys. Rev. Lett. 104, 016401 (2010)].

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