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P. Popčević

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Published work

3 published item(s)

preprint2017arXiv

Unusual behavior of cuprates explained by heterogeneous charge localization

The cuprate high-temperature superconductors are among the most intensively studied materials, yet essential questions regarding their principal phases and the transitions between them remain unanswered. Generally thought of as doped charge-transfer insulators, these complex lamellar oxides exhibit pseudogap, strange-metal, superconducting and Fermi-liquid behaviour with increasing hole-dopant concentration. Here we propose a simple inhomogeneous Mott-like (de)localization model wherein exactly one hole per copper-oxygen unit is gradually delocalized with increasing doping and temperature. The model is percolative in nature, with parameters that are experimentally constrained. It comprehensively captures pivotal unconventional experimental results, including the temperature and doping dependence of the pseudogap phenomenon, the strange-metal linear temperature dependence of the planar resistivity, and the doping dependence of the superfluid density. The success and simplicity of our model greatly demystify the cuprate phase diagram and point to a local superconducting pairing mechanism involving the (de)localized hole.

preprint2015arXiv

Dramatic pressure-driven enhancement of bulk skyrmion stability

The recent discovery of magnetic skyrmion lattices initiated a surge of interest in the scientific community. Several novel phenomena have been shown to emerge from the interaction of conducting electrons with the skyrmion lattice, such as a topological Hall-effect and a spin-transfer torque at ultra-low current densities. In the insulating compound Cu2OSeO3, magneto-electric coupling enables control of the skyrmion lattice via electric fields, promising a dissipation-less route towards novel spintronic devices. One of the outstanding fundamental issues is related to the thermodynamic stability of the skyrmion lattice. To date, the skyrmion lattice in bulk materials has been found only in a narrow temperature region just below the order-disorder transition. If this narrow stability is unavoidable, it would severely limit applications. Here we present the discovery that applying just moderate pressure on Cu2OSeO3 substantially increases the absolute size of the skyrmion pocket. This insight demonstrates directly that tuning the electronic structure can lead to a significant enhancement of the skyrmion lattice stability. We interpret the discovery by extending the previously employed Ginzburg-Landau approach and conclude that change in the anisotropy is the main driver for control of the size of the skyrmion pocket. This realization provides an important guide for tuning the properties of future skyrmion hosting materials.

preprint2010arXiv

High pressure study of transport properties in Co$_{1/3}$NbS$_2$

This is the first study of the effect of pressure on transition metal dichalcogenides intercalated by atoms that order magnetically. Co$_{1/3}$NbS$_2$ is a layered system where the intercalated Co atoms order antiferromagnetically at T$_N$ = 26 K at ambient pressure. We have conducted a detailed study of dc-resistivity ($ρ$), thermoelectric power (S) and thermal conductivity ($κ$). We found that at ambient pressure the magnetic transition corresponds to a well pronounced peak in dS/dT, as well as to a kink in the dc-resistivity. The effect of ordering on the thermal conductivity is rather small but, surprisingly, more pronounced in the lattice contribution than in the electronic contribution to $κ$. Under pressure, the resistivity increases in the high temperature range, contrary to all previous measurements in other layered transition metal dichalcogenides (TMD). In the low temperature range, the strong dependences of thermopower and resistivity on pressure are observed below TN, which, in turn, also depends on pressure at rate of dT$_N$/dp $\approx$ -1 K/kbar. Several possible microscopic explanations of the reduction of the ordering temperature and the evolution of the transport properties with pressure are discussed.