Researcher profile

P. Mavropoulos

P. Mavropoulos contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Mesoscopic electron focusing in topological insulators

The particle wave duality sets a fundamental correspondence between optics and quantum mechanics. Within this framework, the propagation of quasiparticles can give rise to superposition phenomena which, like for electromagnetic waves, can be described by the Huygens principle. However, the utilization of this principle by means of propagation and manipulation of quantum information is limited by the required coherence in time and space. Here we show that in topological insulators, which in their pristine form are characterized by opposite propagation directions for the two quasiparticles spin channels, mesoscopic focusing of coherent charge density oscillations can be obtained at large nested segments of constant energy contours by magnetic surface doping. Our findings provide evidence of strongly anisotropic Dirac fermion-mediated interactions. Even more remarkably, the validity of our findings goes beyond topological insulators but applies for systems with spin orbit lifted degeneracy in general. It demonstrates how spin information can be transmitted over long distances, allowing the design of experiments and devices based on coherent quantum effects in this fascinating class of materials.

preprint2015arXiv

Dzyaloshinskii-Moriya interaction and Hall effects in the skyrmion phase of MnFeGe alloys

We carry out density functional theory calculations which demonstrate that the electron dynamics in the skyrmion phase of Fe-rich Mn$_{1-x}$Fe$_x$Ge alloys is governed by Berry phase physics. We observe that the magnitude of the Dzyaloshinskii-Moriya interaction, directly related to the mixed space-momentum Berry phases, changes sign and magnitude with concentration $x$ in direct correlation with the data of Shibata {\it et al.}, Nature Nanotech. {\bf 8}, 723 (2013). The computed anomalous and topological Hall effects in FeGe are also in good agreement with available experiments. We further develop a simple tight-binding model able to explain these findings. Finally, we show that the adiabatic Berry phase picture is violated in the Mn-rich limit of the alloys.

preprint2015arXiv

First-principles calculations of exchange interactions, spin waves, and temperature dependence of magnetization in inverse-Heusler-based spin gapless semiconductors

Employing first principles electronic structure calculations in conjunction with the frozen-magnon method we calculate exchange interactions, spin-wave dispersion, and spin-wave stiffness constants in inverse-Heusler-based spin gapless semiconductor (SGS) compounds Mn$_2$CoAl, Ti$_2$MnAl, Cr$_2$ZnSi, Ti$_2$CoSi and Ti$_2$VAs. We find that their magnetic behavior is similar to the half-metallic ferromagnetic full-Heusler alloys, i.e., the intersublattice exchange interactions play an essential role in the formation of the magnetic ground state and in determining the Curie temperature, $T_\mathrm{c}$. All compounds, except Ti$_2$CoSi possess a ferrimagnetic ground state. Due to the finite energy gap in one spin channel, the exchange interactions decay sharply with the distance, and hence magnetism of these SGSs can be described considering only nearest and next-nearest neighbor exchange interactions. The calculated spin-wave dispersion curves are typical for ferrimagnets and ferromagnets. The spin-wave stiffness constants turn out to be larger than those of the elementary 3$d$-ferromagnets. Calculated exchange parameters are used as input to determine the temperature dependence of the magnetization and $T_\mathrm{c}$ of the SGSs. We find that the $T_\mathrm{c}$ of all compounds is much above the room temperature. The calculated magnetization curve for Mn$_2$CoAl as well as the Curie temperature are in very good agreement with available experimental data. The present study is expected to pave the way for a deeper understanding of the magnetic properties of the inverse-Heusler-based SGSs and enhance the interest in these materials for application in spintronic and magnetoelectronic devices.