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Researcher profile

P. Manfrinetti

P. Manfrinetti contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-concond-mat.str-elcond-mat.other

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Published work

9 published item(s)

preprint2015arXiv

Exploring the feasibility of Fe(Se,Te) conductors by ex-situ Powder-in-Tube method

In this work, the feasibility condition of Powder-In-Tube (PIT) processed wires of Fe(Se,Te) superconductor has been investigated. We faced several technical issues that are extensively described and discussed. In particular, we tested different metals and alloys as external sheaths (Cu, Ag, Nb, Ta, Ni, Fe, cupronickel, brass) concluding that the only sheath that does not affect substantially the Fe(Se,Te) phase is Fe. On the other hand, Fe sheath introduces excess iron in the Fe(Se,Te) phase, which affects the superconducting properties; we investigated the effects of the thermal treatments and of the powder composition in order to avoid it. The maximum Jc value obtained in our samples is 4*10^2 A/cm2, comparable to other published values of PIT conductors of the 11 family. We conclude that the fabrication of Fe(Se,Te) wires by PIT method is quite challenging and other approaches should be developed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Magnetic compensation phenomenon by Nd doping in spin surplus Sm based ferromagnetic intermetallic SmScGe

The magnetization compensation phenomenon is observed for Sm1-xNdxScGe at x = 0.09 at a temperature near 90 K in a small applied magnetic field, which establishes the spin surplus status of magnetic moment of Sm in the host matrix. We also noted that the sample profiles in QD SQUID magnetometer become asymmetric in some situations indicating significant contributions from multiple moments higher than the dipole moment. We have successfully accounted for them using a fitting procedure involving the higher order magnetic moments.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetic properties of EuPtSi$_3$ single crystals

Single crystals of EuPtSi$_3$, which crystallize in the BaNiSn$_3$-type crystal structure, have been grown by high temperature solution growth method using molten Sn as the solvent. EuPtSi$_3$ which lacks the inversion symmetry and has only one Eu site in the unit cell is found to be an antiferromagnet with two successive magnetic transitions at $T_{\rm N1}$ = 17 K and $T_{\rm N2}$ = 16 K, as inferred from magnetic susceptibility, heat capacity and $^{151}$Eu Mössbauer measurements. The isothermal magnetization data for $H \parallel$ [001] reveal a metamagnetic transition at a critical field $H_{\rm c}$ = 1 T. The magnetization saturates to a moment value of 6.43 $μ_{\rm B}$/Eu above 5.9 T (9.2 T) for $H \parallel $ [001] ([100]), indicating that these fields are spin-flip fields for the divalent Eu moments along the two axes. The origin of this anisotropic behaviour is discussed. A magnetic (H, T) phase diagram has been constructed from the temperature dependence of isothermal magnetization data. The reduced jump in the heat capacity at $T_{\rm N1}$ indicates a transition to an incommensurate, amplitude modulated antiferromagnetic structure. The shape of the hyperfine field split Mössbauer spectrum at $T_{\rm N1}$ provides additional support for the proposed nature of this magnetic transition.

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preprint2010arXiv

Self-magnetic compensation and Exchange Bias in ferromagnetic Samarium systems

For Sm(3+) ions in a vast majority of metallic systems, the following interesting scenario has been conjured up for long, namely, a magnetic lattice of tiny self (spin-orbital) compensated 4f-moments exchange coupled (and phase reversed) to the polarization in the conduction band. We report here the identification of a self-compensation behavior in a variety of ferromagnetic Sm intermetallics via the fingerprint of a shift in the magnetic hysteresis (M-H) loop from the origin. Such an attribute, designated as exchange bias in the context of ferromagnetic/antiferromagnetic multilayers, accords these compounds a potential for niche applications in spintronics. We also present results on magnetic compensation behavior on small Gd doping (2.5 atomic percent) in one of the Sm ferromagnets (viz. SmCu(4)Pd). The doped system responds like a pseudo-ferrimagnet and it displays a characteristic left-shifted linear M-H plot for an antiferromagnet.

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preprint2009arXiv

Magnetic Anisotropy in Single Crystalline CeAu$_{2}$In$_{4}$

We have grown the single crystals of LaAu$_{2}$In$_{4}$ and CeAu$_{2}$In$_{4}$ by high temperature solution method and report on the anisotropic magnetic behavior of CeAu$_{2}$In$_{4}$ . The compounds crystallize in an orthorhombic structure with space group \textit {Pnma}. LaAu$_{2}$In$_{4}$ shows a Pauli-paramagnetic behavior. CeAu$_{2}$In$_{4}$ do not order down to 1.8 K. The easy axis of magnetization for CeAu$_{2}$In$_{4}$ is along [010] direction. The magnetization data is analyzed on the basis of crystalline electric field (CEF) model.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

New Samarium and Neodymium based admixed ferromagnets with near zero net magnetization and tunable exchange bias field

Rare earth based intermetallics, SmScGe and NdScGe, are shown to exhibit near zero net magnetization with substitutions of 6 to 9 atomic percent of Nd and 25 atomic percent of Gd, respectively. The notion of magnetic compensation in them is also elucidated by the crossover of zero magnetization axis at low magnetic fields (less than 103 Oe) and field-induced reversal in the orientation of the magnetic moments of the dissimilar rare earth ions at higher magnetic fields. These magnetically ordered materials with no net magnetization and appreciable conduction electron polarization display an attribute of an exchange bias field, which can be tuned. The attractively high magnetic ordering temperatures of about 270 K, underscore the importance of these materials for potential applications in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Effects of neutron irradiation on polycrystalline Mg11B2

We studied the influence of the disorder introduced in polycrystalline MgB2 samples by neutron irradiation. To circumvent self shielding effects due to the strong interaction between thermal neutrons and 10B we employed isotopically enriched 11B which contains 40 times less 10B than natural B. The comparison of electrical and structural properties of different series of samples irradiated in different neutron sources, also using Cd shields, allowed us to conclude that, despite the low 10B content, the main damage mechanisms are caused by thermal neutrons, whereas fast neutrons play a minor role. Irradiation leads to an improvement in both upper critical field and critical current density for an exposure level in the range 1-2x1018 cm-2. With increasing fluence the superconducting properties are depressed. An in-depth analysis of the critical field and current density behaviour has been carried out to identify what scattering and pinning mechanisms come into play. Finally the correlation between some characteristic lengths and the transition widths is analysed.

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preprint2006arXiv

Role of charge doping and lattice distortions in codoped Mg_{1-x}(AlLi)_{x}B_2 compounds

We prepared a series of Mg_{1-x}(AlLi)_{x}B_2 samples with 0≤x≤0.45 in order to compensate with Li the electron doping induced by Al. Structural characterization by means of neutron and X-ray diffraction confirms that Li enters the MgB2 structure even though in an amount less than nominal one. We performed susceptibility, resistivity and specific heat measurements. Vibrational properties were also investigated by means of Raman spectroscopy. We compare these results with those obtained on a homologous series of Mg_{1-x}Al_{x}B_2 samples. The systematic success of scaling the relevant properties with the Al content rather than with the electron doping suggests that lattice deformation plays an important role in tuning the superconducting properties.

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preprint2001arXiv

Transport properties of c-oriented MgB2 thin films grown by Pulsed Laser Deposition

The electronic anisotropy in MgB2, which arises from its layered crystal structure is not completely clear until now. High quality c-oriented films offer the opportunity of studying such property. MgB2 thin films were deposited by using two methods both based on room temperature precursor deposition (by Pulsed Laser Ablation) and ex-situ annealing in Mg atmosphere. The two methods differ for the starting targets: stoichiometric MgB2 in one case and Boron in the other. The two films presented in this paper are grown by means of the two techniques on MgO substrates and are both c-oriented; they present TC values of 31.5 and 37.4 K respectively. Upper critical field measurements, up to 9T, with the magnetic field in perpendicular and parallel directions in respect to the film surface evidenced anisotropy ratios of 1.8 and 1.4 respectively. In this paper we will discuss this remarkable and surprising difference also in comparison with the literature data.

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