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Researcher profile

P. M. Voyles

P. M. Voyles contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2023arXiv

Nucleation of Al Nanocrystals in Solute-Substituted Al Metallic Glasses I: Structural characterization

Primary crystallization in high Al-content metallic glasses is driven by nanometer-diameter regions with internal structure similar to fcc Al. Comparison of fluctuation electron microscopy (FEM) data to FEM simulations of fcc Al clusters dispersed in a dense-random packed matrix is used to extract the diameter and volume fraction of the ordered regions in a Al88Y7Fe5 base glass and in glasses with 1 at.% Cu substituted for Y or Al. The size and density of nanocrystals were measured as a function of isothermal annealing time for the same alloys. The volume fraction of crystalline material grows under isothermal annealing, so the phase transformation is not purely grain coarsening, but the crystalline volume fraction is lower than the volume fraction of ordered regions in the as-quenched samples, so not all of the ordered regions act as nuclei. Changes in diameter and volume fraction of the ordered regions with alloying are correlated with changes in the crystallization temperature, nucleation rate, and nanocrystal density. No evidence for phase separation is observed, and FEM simulations from a molecular dynamics quenched structural model of similar composition do not show the features observed in experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Structural tunability and origin of two-level systems in amorphous silicon

Amorphous silicon films prepared by electron beam evaporation have systematically and substantially greater atomic density for higher thickness, higher growth temperature, and slower deposition rate, reaching the density of crystalline Si when films of thickness greater than ~300 nm are grown at 425 $^{\circ}$C and at <1 $Å$/sec. A combination of spectroscopic techniques provide insight into atomic disorder, local strains, dangling bonds, and nanovoids. Electron diffraction shows that the short-range order of the amorphous silicon is similar at all growth temperatures, but fluctuation electron microscopy shows that films grown above room-temperature show a form of medium-range order not previously observed in amorphous silicon. Atomic disorder and local strain obtained from Raman spectroscopy reduce with increasing growth temperature and show a non-monotonic dependence on thickness. Dangling bond density decreases with increasing growth temperature and is only mildly dependent on thickness. Positron annihilation Doppler broadening spectroscopy and electron energy loss spectroscopy show that nanovoids, and not density variations within the network, are responsible for reduced atomic density. Specific heat and mechanical loss measurements, which quantify the density of tunneling two-level systems, in combination with the structural data, suggest that two-level systems in amorphous silicon films are associated with nanovoids and their surroundings; which are in essence loosely bonded regions where atoms are less constrained.

0 citations0 reviewsNo code linkedOpen access