Researcher profile

P. M. Ledingham

P. M. Ledingham contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

In Situ Characterisation of an Optically Thick Atom-Filled Cavity

A means for precise experimental characterization of the dielectric susceptibility of an atomic gas inside and optical cavity is important for design and operation of quantum light matter interfaces, particularly in the context of quantum information processing. Here we present a numerically optimised theoretical model to predict the spectral response of an atom-filled cavity, accounting for both homogeneous and inhomogeneous broadening at high optical densities. We investigate the regime where the two broadening mechanisms are of similar magnitude, which makes the use of common approximations invalid. Our model agrees with an experimental implementation with warm caesium vapour in a ring cavity. From the cavity response, we are able to extract important experimental parameters, for instance the ground state populations, total number density and the magnitudes of both homogeneous and inhomogeneous broadening.

preprint2015arXiv

A Cavity-Enhanced Room-Temperature Broadband Raman Memory

Broadband quantum memories hold great promise as multiplexing elements in future photonic quantum information protocols. Alkali vapour Raman memories combine high-bandwidth storage, on-demand read-out, and operation at room temperature without collisional fluorescence noise. However, previous implementations have required large control pulse energies and suffered from four-wave mixing noise. Here we present a Raman memory where the storage interaction is enhanced by a low-finesse birefringent cavity tuned into simultaneous resonance with the signal and control fields, dramatically reducing the energy required to drive the memory. By engineering anti-resonance for the anti-Stokes field, we also suppress the four-wave mixing noise and report the lowest unconditional noise floor yet achieved in a Raman-type warm vapour memory, $(15\pm2)\times10^{-3}$ photons per pulse, with a total efficiency of $(9.5\pm0.5)$%.

preprint2011arXiv

Photon echo quantum memories in inhomogeneously broadened two level atoms

Here we propose a solid-state quantum memory that does not require spectral holeburning, instead using strong rephasing pulses like traditional photon echo techniques. The memory uses external broadening fields to reduce the optical depth and so switch off the collective atom-light interaction when desired. The proposed memory should allow operation with reasonable efficiency in a much broader range of material systems, for instance Er3+ doped crystals which have a transition at 1.5 um. We present analytic theory supported by numerical calculations and initial experiments.