Source author record

J. H. D. Munns

J. H. D. Munns appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

3works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

3 published item(s)

preprint2016arXiv

In Situ Characterisation of an Optically Thick Atom-Filled Cavity

A means for precise experimental characterization of the dielectric susceptibility of an atomic gas inside and optical cavity is important for design and operation of quantum light matter interfaces, particularly in the context of quantum information processing. Here we present a numerically optimised theoretical model to predict the spectral response of an atom-filled cavity, accounting for both homogeneous and inhomogeneous broadening at high optical densities. We investigate the regime where the two broadening mechanisms are of similar magnitude, which makes the use of common approximations invalid. Our model agrees with an experimental implementation with warm caesium vapour in a ring cavity. From the cavity response, we are able to extract important experimental parameters, for instance the ground state populations, total number density and the magnitudes of both homogeneous and inhomogeneous broadening.

preprint2015arXiv

A Cavity-Enhanced Room-Temperature Broadband Raman Memory

Broadband quantum memories hold great promise as multiplexing elements in future photonic quantum information protocols. Alkali vapour Raman memories combine high-bandwidth storage, on-demand read-out, and operation at room temperature without collisional fluorescence noise. However, previous implementations have required large control pulse energies and suffered from four-wave mixing noise. Here we present a Raman memory where the storage interaction is enhanced by a low-finesse birefringent cavity tuned into simultaneous resonance with the signal and control fields, dramatically reducing the energy required to drive the memory. By engineering anti-resonance for the anti-Stokes field, we also suppress the four-wave mixing noise and report the lowest unconditional noise floor yet achieved in a Raman-type warm vapour memory, $(15\pm2)\times10^{-3}$ photons per pulse, with a total efficiency of $(9.5\pm0.5)$%.

preprint2015arXiv

Broadband, noise-free optical quantum memory with neutral nitrogen-vacancy centers in diamond

It is proposed that the ground-state manifold of the neutral nitrogen-vacancy center in diamond could be used as a quantum two-level system in a solid-state-based implementation of a broadband, noise-free quantum optical memory. The proposal is based on the same-spin $Λ$-type three-level system created between the two E orbital ground states and the A$_1$ orbital excited state of the center, and the cross-linear polarization selection rules obtained with the application of transverse electric field or uniaxial stress. Possible decay and decoherence mechanisms of this system are discussed, and it is shown that high-efficiency, noise-free storage of photons as short as a few tens of picoseconds for at least a few nanoseconds could be possible at low temperature.