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Source author record

P. M. Ajayan

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-matcond-mat.otherphysics.app-ph

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7 publications

preprint2022arXiv

Two-dimensional (2D) d-Silicates from abundant natural minerals

In the last decade, the materials community has been exploring new 2D materials (graphene, metallene, TMDs, TMCs, MXene, among others) that have unique physical and chemical properties. Recently, a new family of 2D materials, the so-called 2D silicates, have been proposed. They are predicted to exhibit exciting properties (such as high catalytic activity, piezoelectricity, and 2D magnetism). In the current work, we demonstrate a generic approach to the synthesis of large-scale 2D silicates from selected minerals, such as Diopside (d). Different experimental techniques were used to confirm the existence of the 2D structures (named 2D-d-silicates). DFT simulations were also used to gain insight into the structural features and energy harvesting mechanisms (flexoelectric response generating voltage up to 10 V). The current approach is completely general and can be utilized for large-scale synthesis of 2D silicates and their derivatives, whose large-scale syntheses have been elusive.

Open access
preprint2015arXiv

Hall and field-effect mobilities in few layered pp-WSe2_2 field-effect transistors

Here, we present a temperature (TT) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe2_2 exfoliated onto SiO2_2. Without dielectric engineering and beyond a TT-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm2^2/Vs at TT=300 K. The hole Hall mobility reaches a maximum value of 650 cm2^2/Vs as TT is lowered below ∼\sim 150 K, indicating that insofar WSe2_2-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe2_2 and SiO2_2. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe2_2-based FETs displaying higher room temperature mobilities, i.e. approaching those of pp-doped Si, which would make it a suitable candidate for high performance opto-electronics.

Open access
preprint2013arXiv

Intrinsic carrier mobility of multi-layered MoS2_2 field-effect transistors on SiO2_2

By fabricating and characterizing multi-layered MoS2_2-based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μμ due to the Schottky barriers at the contacts. For a back-gated two-terminal configuration we observe mobilities as high as 125 cm2^2V−1^{-1}s−1^{-1} which is considerably smaller than 306.5 cm2^2V−1^{-1}s−1^{-1} as extracted from the same device when using a four-terminal configuration. This indicates that the intrinsic mobility of MoS2_2 on SiO2_2 is significantly larger than the values previously reported, and provides a quantitative method to evaluate the charge transport through the contacts.

Open access
preprint2012arXiv

Local charge transfer doping in suspended graphene nanojunctions

We report electronic transport measurements in nanoscale graphene transistors with gold and platinum electrodes whose channel lengths are shorter than 100 nm, and compare them with transistors with channel lengths from 1 \textmu{}m to 50 \textmu{}m. We find a large positive gate voltage shift in charge neutrality point (NP) for transistors made with platinum electrodes but negligible shift for devices made with gold electrodes. This is consistent with the transfer of electrons from graphene into the platinum electrodes. As the channel length increases, the disparity between the measured NP using gold and platinum electrodes disappears.

Open access
preprint2010arXiv

Relativistic Drude Response of Photoexcited Dirac Quasiparticles in Graphene

Graphene, a monolayer of carbon atoms arranged in a hexagonal pattern, provides a unique two-dimensional (2D) system exhibiting exotic phenomena such as quantum Hall effects, massless Dirac quasiparticle excitations and universal absorption & conductivity. The linear energy-momentum dispersion relation in graphene also offers the opportunity to mimic the physics of far-away relativistic particles like neutron stars and white dwarfs. In this letter, we perform a counterintuitive ultrafast pump-probe experiment with high photon energies to isolate the Drude-like intraband dynamics of photoexcited carriers. We directly demonstrate the relativistic nature of the photoexcited Dirac quasiparticles by observing a nonlinear scaling of the response with the density of photoexcited carriers. This is in striking contrast to the linear scaling that is usually observed in conventional materials. Our results also indicate strong electron-phonon coupling in graphene, leading to a sub-100 femtosecond thermalization between high energy photoexcited carriers and optical phonons.

Open access
preprint2002arXiv

Nonlinear behavior in the Thermopower of Doped Carbon Nanotubes Due to Strong, Localized States

The temperature dependent thermoelectric power (TEP) of boron and nitrogen doped multi-walled carbon nanotube mats has been measured showing that such dopants can be used to modify the majority conduction from p-type to n-type. The TEP of boron doped nanotubes is positive, indicating hole-like carriers. In contrast, the nitrogen doped material exhibits negative TEP over the same temperature range, suggesting electron-like conduction. Therefore, the TEP distinct nonlinearites are primarily due to the formation of donor and acceptor states in the B- and N- doped materials. The sharply varying density of states used in our model can be directly correlated to the scanning tunneling spectroscopy studies of these materials.

Open access
preprint2000arXiv

Identification of Electron Donor States in N-doped Carbon Nanotubes

Nitrogen doped carbon nanotubes have been synthesized using pyrolysis and characterized by Scanning Tunneling Spectroscopy and transmission electron microscopy. The doped nanotubes are all metallic and exhibit strong electron donor states near the Fermi level. Using tight-binding and ab initio calculations, we observe that pyridine-like N structures are responsible for the metallic behavior and the prominent features near the Fermi level. These electron rich structures are the first example of n-type nanotubes, which could pave the way to real molecular hetero-junction devices.

Open access

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