Researcher profile

P. Cadden-Zimansky

P. Cadden-Zimansky contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2016arXiv

Magneto-Infrared Spectroscopic Study of Ultrathin Bi$_{2}$Te$_{3}$ Single Crystals

Ultrathin Bi$_{2}$Te$_{3}$ single crystals laid on Scotch tape are investigated by Fourier transform infrared spectroscopy at $4$K and in a magnetic field up to $35$T. The magneto-transmittance spectra of the Bi$_{2}$% Te$_{3}$/tape composite are analyzed as a two-layer system and the optical conductivity of Bi$_{2}$Te$_{3}$ at different magnetic fields are extracted. We find that magnetic field modifies the optical conductivity in the following ways: (1) Field-induced transfer of the optical weight from the lower frequency regime ($<250$cm$^{-1}$) to the higher frequency regime ($% >250$cm$^{-1}$) due to the redistribution of charge carriers across the Fermi surface. (2) Evolving of a Fano-resonance-like spectral feature from an anti-resonance to a resonance with increasing magnetic field. Such behavior can be attributed to the electron-phonon interactions between the $% E_{u}^{1}$ optical phonon mode and the continuum of electronic transitions. (3) Cyclotron resonance resulting from the inter-valence band Landau level transitions, which can be described by the electrodynamics of massive Dirac holes.

preprint2011arXiv

Measurement of graphite tight-binding parameters using high field magneto-reflectance

frared reflectance spectroscopy at 4K in fields up to 31T. Both Schrödinger-like (K-point) and Dirac-like (H-point) Landau level transitions have been observed, and their magnetic field dispersion are analyzed by a newly-derived limiting case of the Slonczewski-Weiss-McClure model. The values of the band parameters are evaluated without using sophisticated conductivity peak lineshape analysis. In this work, several less-explored band parameters are determined from the experimental results and they are known to result in electron-hole asymmetry and the opening of an energy gap between the electron and hole bands in multilayer and bilayer graphene systems.

preprint2011arXiv

Thermal fluctuations and flux-tunable barrier in proximity Josephson junctions

The effect of thermal fluctuations in Josephson junctions is usually analysed using the Ambegaokar-Halperin (AH) theory in the context of thermal activation. &#34;Enhanced&#34; fluctuations, demonstrated by broadening of current-voltage characteristics, have previously been found for proximity Josephson junctions. Here we report measurements of micron-scale normal metal loops contacted with thin superconducting electrodes, where the unconventional loop geometry enables tuning of the junction barrier with applied flux; for some geometries, the barrier can be effectively eliminated. Stronger fluctuations are observed when the flux threading the normal metal loop is near an odd half-integer flux quantum, and for devices with thinner superconducting electrodes. These findings suggest that the activation barrier, which is the Josephson coupling energy of the proximity junction, is different from that of conventional Josephson junctions. Simple one dimensional quasiclassical theory can predict the interference effect due to the loop structure, but the exact magnitude of the coupling energy cannot be computed without taking into account the details of the sample dimensions. In this way, the physics of this system is similar to the phase slipping process in thin superconducting wires. Besides shedding light on thermal fluctuations in proximity junctions, the findings here also demonstrate a new type of superconducting interference device with two normal branches sharing the same SN interface on both sides of the device, which has technical advantages for making symmetrical interference devices.

preprint2010arXiv

Interaction-induced shift of the cyclotron resonance of graphene using infrared spectroscopy

We report a study of the cyclotron resonance (CR) transitions to and from the unusual $n=0$ Landau level (LL) in monolayer graphene. Unexpectedly, we find the CR transition energy exhibits large (up to 10%) and non-monotonic shifts as a function of the LL filling factor, with the energy being largest at half-filling of the $n=0$ level. The magnitude of these shifts, and their magnetic field dependence, suggests that an interaction-enhanced energy gap opens in the $n=0$ level at high magnetic fields. Such interaction effects normally have limited impact on the CR due to Kohn&#39;s theorem [W. Kohn, Phys. Rev. {\bf 123}, 1242 (1961)], which does not apply in graphene as a consequence of the underlying linear band structure.

preprint2010arXiv

Multicomponent fractional quantum Hall effect in graphene

We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that may be explained by strongly interacting composite Fermions with full SU(4) symmetric underlying degrees of freedom. The FQHE gaps are measured from temperature dependent transport to be up 10 times larger than in any other semiconductor system. The remarkable strength and unusual hierarcy of the FQHE described here provides a unique opportunity to probe correlated behavior in the presence of expanded quantum degrees of freedom.

preprint2010arXiv

Ultrafast carrier and phonon dynamics in Bi2Se3 crystals

Ultrafast time-resolved differential reflectivity of Bi2Se3 crystals is studied using optical pump-probe spectroscopy. Three distinct relaxation processes are found to contribute to the initial transient reflectivity changes. The deduced relaxation timescale and the sign of the reflectivity change suggest that electron-phonon interactions and defect-induced charge trapping are the underlying mechanisms for the three processes. After the crystal is exposed to air, the relative strength of these processes is altered and becomes strongly dependent on the excitation photon energy.

preprint2009arXiv

Symmetry breaking of the zero energy Landau level in bilayer graphene

The quantum Hall effect near the charge neutrality point in bilayer graphene is investigated in high magnetic fields of up to 35 T using electronic transport measurements. In the high field regime, the eight-fold degeneracy in the zero energy Landau level is completely lifted, exhibiting new quantum Hall states corresponding filling factors $ν=$0, 1, 2, & 3. Measurements of the activation energy gap in tilted magnetic fields suggest that the Landau level splitting at the newly formed $ν=$1, 2, & 3 filling factors are independent of spin, consistent with the formation of a quantum Hall ferromagnet. In addition, measurements taken at the $ν$ = 0 charge neutral point show that, similar to single layer graphene, the bilayer becomes insulating at high fields.