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P. Bai

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cond-mat.mes-hall physics.app-ph physics.optics

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preprint2022arXiv

Realization of ultra-broadband IR up-conversion imaging

Ultra-broadband imaging devices with high performance are in great demand for a variety of technological applications, including imaging, remote sensing, and communications. An ultra-broadband up-converter is realized based on a p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) detector-light emitting diode (LED) device. The device demonstrates an ultra-broad response ranging from visible to terahertz (THz) with good reproducibility. The peak responsivity in the mid-infrared (MIR) region is 140 mA/W at 10.5 microns. The HIWIP-LED shows enormous potential for ultra-broadband up-conversion covering all infrared atmospheric windows, as well as the THz region, and the pixel-less imaging of the MIR spot from the CO2 laser is further demonstrated. In addition, the proposed up-converter also performs as a near-infrared and visible detector under zero bias by using a bi-functional LED. Thanks to its ultra-wide response, the HIWIP-LED up-converter has great promise for stable, high-performance ultra-broadband pixel-less imaging and multi-functional analysis systems.

preprint2011arXiv

Pseudo-potential Band Structure Calculation of InSb Ultra-thin Films and its application to assess the n-Metal-Oxide-Semiconductor Transistor Performance

Band structure of InSb thin films with $<100>$ surface orientation is calculated using empirical pseudopotential method (EPM) to evaluate the performance of nanoscale devices using InSb substrate. Contrary to the predictions by simple effective mass approximation methods (EMA), our calculation reveals that $Γ$ valley is still the lowest lying conduction valley. Based on EPM calculations, we obtained the important electronic structure and transport parameters, such as effective mass and valley energy minimum, of InSb thin film as a function of film thickness. Our calculations reveal that the 'effective mass' of $Γ$ valley electrons increases with the scaling down of the film thickness. We also provide an assessment of nanoscale InSb thin film devices using Non-Equilibrium Green's Function under the effective mass framework in the ballistic regime.