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Researcher profile

P. A. Dalgarno

P. A. Dalgarno contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-ph

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Published work

3 published item(s)

preprint2011arXiv

Controlling the Interaction of Electron and Nuclear Spins in a Tunnel-Coupled Quantum Dot

We present a technique for manipulating the nuclear spins and the emission polarization from a single optically active quantum dot. When the quantum dot is tunnel coupled to a Fermi sea, we have discovered a natural cycle in which an electron spin is repeatedly created with resonant optical excitation. The spontaneous emission polarization and the nuclear spin polarization exhibit a bistability. For a sigma(+) pump, the emission switches from sigma(+) to sigma(-) at a particular detuning of the laser. Simultaneously, the nuclear spin polarization switches from positive to negative. Away from the bistability, the nuclear spin polarization can be changed continuously from negative to positive, allowing precise control via the laser wavelength.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Laser spectroscopy of individual quantum dots charged with a single hole

We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples exhibit larger inhomogeneous broadening (x3) and smaller absorption contrast (x10) than the n-doped sample. For X1+ in the Be-doped sample, a dot dependent non-linear Fano effect is observed, demonstrating coupling to degenerate continuum states. However, for the C-doped sample the X1+ lineshape and saturation broadening follows isolated atomic transition behaviour. This C-doped device structure is useful for single hole spin initialization, manipulation, and measurement.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Probing single charge fluctuations in a semiconductor with laser spectroscopy on a quantum dot

We probe local charge fluctuations in a semiconductor via laser spectroscopy on a nearby self-assembled quantum dot. We demonstrate that the quantum dot is sensitive to changes in the local environment at the single charge level. By controlling the charge state of localized defects, we are able to infer the distance of the defects from the quantum dot with +-5 nm resolution. The results identify and quantify the main source of charge noise in the commonly-used optical field-effect devices. Based on this understanding we achieve routinely close-totransform-limited quantum dot optical linewidths.

0 citations0 reviewsNo code linkedOpen access