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Researcher profile

Oleg Pankratov

Oleg Pankratov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elmtrl-thphysics.chem-phquant-ph

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Published work

6 published item(s)

preprint2011arXiv

Time-dependent occupation numbers in reduced-density-matrix functional theory: Application to an interacting Landau-Zener model

We prove that if the two-body terms in the equation of motion for the one-body reduced density matrix are approximated by ground-state functionals, the eigenvalues of the one-body reduced density matrix (occupation numbers) remain constant in time. This deficiency is related to the inability of such an approximation to account for relative phases in the two-body reduced density matrix. We derive an exact differential equation giving the functional dependence of these phases in an interacting Landau-Zener model and study their behavior in short- and long-time regimes. The phases undergo resonances whenever the occupation numbers approach the boundaries of the interval [0,1]. In the long-time regime, the occupation numbers display correlation-induced oscillations and the memory dependence of the functionals assumes a simple form.

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preprint2010arXiv

Adiabatic approximation in time-dependent reduced-density-matrix functional theory

With the aim of describing real-time electron dynamics, we introduce an adiabatic approximation for the equation of motion of the one-body reduced-density matrix (one-matrix). The eigenvalues of the one-matrix, which represent the occupation numbers of single-particle orbitals, are obtained from the constrained minimization of the instantaneous ground state energy functional rather than from their dynamical equations. To clarify the motivation for this minimization condition, we discuss a sequence of adiabatic energy functionals, each obeying a minimum principle. The performance of the approximation vis-a`-vis nonadiabatic effects is assessed in real-time simulations for a two-site Hubbard model. Due to the presence of Landau-Zener-type transitions, the system evolves into a nonstationary state with persistent oscillations in the observables. The amplitude and phase of the oscillations exhibit resonance behavior both with respect to the strength of the electron-electron interaction and the rate of variation of the external potential. Both types of resonances have the same origin -- the interference of dynamical and scattering phases.

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preprint2010arXiv

Electron spectrum of epitaxial graphene monolayers

Epitaxial graphene on SiC possesses, quite remarkably, an electron spectrum similar to that of freestanding samples. Yet, the coupling to the substrate, albeit small, affects the quasiparticle properties. Combining \emph{ab initio} calculations with symmetry analysis, we derive a modified Dirac-Weyl Hamiltonian for graphene epilayers. While for the epilayer on the C-face the Dirac cone remains almost intact, for epilayers on the Si-face the band splitting is about 30\,meV. At certain energies, the Dirac bands are significantly distorted by the resonant interaction with interface states, which should lead to mobility suppression, especially on the Si-face.

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preprint2010arXiv

Many body effects in the excitation spectrum of a defect in SiC

We show that electron correlations control the photophysics of defects in SiC through both renormalization of the quasiparticle bandstructure and exciton effects. We consider the carbon vacancy, which is a well-identified defect with two possible excitation channels that involve conduction and valence band states. Corrections to the Kohn-Sham ionization levels are found to strongly depend on the occupation of the defect state. Excitonic effects introduce a red shift of 0.23 eV. The analysis unambigiously re-assigns excitation mechanism at the thresholds in photo-induced paramagnetic resonance measurements [J. Dashdorj \emph{et al.}, J. Appl. Phys. \textbf{104}, 113707 (2008)].

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preprint1995arXiv

Localized Excitons and Breaking of Chemical Bonds at III-V (110) Surfaces

Electron-hole excitations in the surface bands of GaAs(110) are analyzed using constrained density-functional theory calculations. The results show that Frenkel-type autolocalized excitons are formed. The excitons induce a local surface unrelaxation which results in a strong exciton-exciton attraction and makes complexes of two or three electron-hole pairs more favorable than separate excitons. In such microscopic exciton "droplets" the electron density is mainly concentrated in the dangling orbital of a surface Ga atom whereas the holes are distributed over the bonds of this atom to its As neighbors thus weakening the bonding to the substrate. This finding suggests the microscopic mechanism of a laser-induced emission of neutral Ga atoms from GaAs and GaP (110) surfaces.

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