Researcher profile

O. Rubel

O. Rubel contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2015arXiv

Robust Bloch character at the band edges of hybrid halide perovskites

The high-symmetry pseudocubic init cell is often used for modelling the electronic structure of halide perovskites. However, direct comparison of the band structure with more realistic low-symmetry phases is impeded by the zone folding. We utilize a spectral density technique in order to reduce the supercell band structure to a common Bloch basis. This allows us to compare the electronic structure of high- and low-symmetry phases as well as investigate effects of structural and compositional disorder on states near to the band edges that govern transport, dissociation and recombination of optical excitations.

preprint2014arXiv

Unfolding the band structure of disordered solids: from bound states to high-mobility Kane fermions

Supercells are often used in ab initio calculations to model compound alloys, surfaces and defects. One of the main challenges of supercell electronic structure calculations is to recover the Bloch character of electronic eigenstates perturbed by disorder. Here we apply the spectral weight approach to unfolding the electronic structure of group III-V and II-VI semiconductor solid solutions. The illustrative examples include: formation of donor-like states in dilute Ga(PN) and associated enhancement of its optical activity, direct observation of the valence band anticrossing in dilute GaAs:Bi, and a topological band crossover in ternary (HgCd)Te alloy accompanied by emergence of high-mobility Kane fermions. The analysis facilitates interpretation of optical and transport characteristics of alloys that are otherwise ambiguous in traditional first-principles supercell calculations.

preprint2012arXiv

Lead monoxide $α$-PbO: electronic properties and point defect formation

The electronic properties of polycrystalline lead oxide consisting of a network of single-crystalline $α$-PbO platelets and the formation of the native point defects in $α$-PbO crystal lattice are studied using first principles calculations. The $α$-PbO lattice consists of coupled layers interaction between which is too low to produce high efficiency interlayer charge transfer. In practice, the polycrystalline nature of $α$-PbO causes the formation of lattice defects in such a high concentration that defect-related conductivity becomes the dominant factor in the interlayer charge transition. We found that the formation energy for the O vacancies is low, such vacancies are occupied by two electrons in the zero charge state and tend to donate their electrons to the Pb vacancies that leads to ionization of both vacancies.The vacancies introduce localized states in the band gap which can affect charge transport. The O vacancy forms a defect state at 1.03 eV above the valence band which can act as a deep trap for electrons, while the Pb vacancy forms a shallow trap for holes located just 0.1 eV above the valence band. Charge de-trapping from O vacancies can be accounted for the experimentally found dark current decay in ITO/PbO/Au structures.