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Researcher profile

O. Osmani

O. Osmani contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.stat-mech

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Published work

2 published item(s)

preprint2014arXiv

Laser damage in silicon: energy absorption, relaxation and transport

Silicon irradiated with an ultrashort 800 nm-laser pulse is studied theoretically using a two temperature description that considers the transient free carrier density during and after irradiation. A Drude model is implemented to account for the highly transient optical parameters. We analyze the importance of considering these density-dependent parameters as well as the choice of the Drude collision frequency. In addition, degeneracy and transport effects are investigated. The importance of each of these processes for resulting calculated damage thresholds is studied.We report damage thresholds calculations that are in very good agreement with experimental results over a wide range of pulse durations.

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preprint2010arXiv

Unzipping graphene: Extendend defects by ion irradiation

Many of the proposed future applications of graphene require the controlled introduction of defects into its perfect lattice. Energetic ions provide one way of achieving this challenging goal. Single heavy ions with kinetic energies in the 100 MeV range will produce nanometer-sized defects on dielectric but generally not on crystalline metal surfaces. In a metal the ion-induced electronic excitations are efficiently dissipated by the conduction electrons before the transfer of energy to the lattice atoms sets in. Therefore, graphene is not expected to be irradiation sensitive beyond the creation of point defects. Here we show that graphene on a dielectric substrate sustains major modifications if irradiated under oblique angles. Due to a combination of defect creation in the graphene layer and hillock creation in the substrate, graphene is split and folded along the ion track yielding double layer nanoribbons. Our results indicate that the radiation hardness of graphene devices is questionable but also open up a new way of introducing extended low-dimensional defects in a controlled way.

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