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Researcher profile

E. Zallo

E. Zallo contributes to research discovery and scholarly infrastructure.

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quant-phcond-mat.mes-hallcond-mat.mtrl-sciphysics.atom-ph

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Published work

4 published item(s)

preprint2025arXiv

Unveiling the growth mode diagram of GaSe on sapphire

The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the molecular beam epitaxial growth of gallium selenide on 2-inch c-plane sapphire substrates. Using in-situ reflection high-energy electron diffraction (RHEED), in-situ Raman spectroscopy, optical and scanning electron microscopies, we construct a diagram of the gallium selenide growth modes as a function of substrate temperature (530-650 °C) and Se/Ga flux ratio (5-110). The growth mode diagram reveals distinct regimes, including the growth of layered post-transition metal monochalcogenide GaSe with an unstrained in-plane lattice constant of 0.371$\pm$0.001 nm and a partial epitaxial alignment on sapphire. This work demonstrates a RHEED-based pathway for synthesizing gallium selenide of specific phase and morphology, and the construction of a phase diagram for high vapor pressure III-VI compounds that can be applied to a wide range of other metal chalcogenide materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

An artificial atom locked to natural atoms

Single-photon sources that emit photons at the same energy play a key role in the emerging concepts of quantum information, such as entanglement swapping, quantum teleportation and quantum networks. They can be realized in a variety of systems, where semiconductor quantum dots, or 'artificial atoms', are arguably among the most attractive. However, unlike 'natural atoms', no two artificial atoms are alike. This peculiarity is a serious hurdle for quantum information applications that require photonic quantum states with identical energies. Here we demonstrate a single artificial atom that generates photons with an absolute energy that is locked to an optical transition in a natural atom. Furthermore, we show that our system is robust and immune to drifts and fluctuations in the environment of the emitter. Our demonstration is crucial for realization of a large number of universally-indistinguishable solid-state systems at arbitrary remote locations, where frequency-locked artificial atoms might become fundamental ingredients.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Semiconductor quantum dots with light-hole exciton ground state: fabrication and fine structure

Quantum dots (QDs) can act as convenient hosts of two-level quantum szstems, such as single electron spins, hole spins or excitons (bound electron-hole pairs). Due to quantum confinement, the ground state of a single hole confined in a QD usually has dominant heavy-hole (HH) character. For this reason light-hole (LH) states have been largely neglected, despite the fact that may enable the realilzation of coherent photon-to-spin converters or allow for faster spin manipulation compared to HH states. In this work, we use tensile strains larger than 0.3% to switch the ground state of excitons confined in high quality GaAs/AlGaAs QDs from the conventional HH- to LH-type. The LH-exciton fine structure is characterized by two in-plane-polarized lines and, ~400 micro-eV above them, by an additional line with pronounced out-of-plane oscillator strength, consistent with theoretical predictions based on atomistic empirical pseudopotential calculations and a simple mesoscopic model.

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preprint2012arXiv

Universal recovery of the bright-exciton level-degeneracy in quantum dots without structural symmetry

The lack of structural symmetry which usually characterizes semiconductor quantum dots lifts the energetic degeneracy of the bright excitonic states and hampers severely their use as high fidelity sources of entangled photons. We demonstrate experimentally and theoretically that it is always possible to restore the excitonic degeneracy by the simultaneous application of large strain and electric fields, despite the fact that this possibility has fundamentally been doubted. This is achieved by using one external perturbation to align the polarization of the exciton emission along the axis of the second perturbation, which then erases completely the energy splitting of the states. This result, which holds for any QD structure, highlights the potential of combining complementary external fields to create artificial atoms meeting the stringent requirements posed by scalable semiconductor-based quantum-technology.

0 citations0 reviewsNo code linkedOpen access