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O. Conde

O. Conde appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

7 published item(s)

preprint2016arXiv

Argon assisted chemical vapor deposition of CrO$_2$: an efficient process leading to high quality epitaxial films

A comparative study of the structural, microstructural and magnetic properties of CrO$_2$ thin films grown onto (110) and (100) TiO$_2$ rutile single crystal substrates by chemical vapor deposition (CVD), using CrO$_3$ as chromium precursor and either oxygen or argon as carrier gas is presented. Our results show that growth under argon carrier gas leads to high quality CrO$_2$ epilayers with structural and magnetic properties similar to those obtained using the more standard oxygen carrier gas. Furthermore, we interpret the larger magnetic coercivity observed for the (110) oriented films in terms of their microstructure, in particular of the highest strain and edge roughness of the building structures of the CrO$_2$ epilayers, which are settled by the substrate crystallographic orientation.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electrical Switching of Magnetization in Films of alpha-Iron with Naturally Hydroxidized Surface

Control of the magnetization vector in ferromagnetic films and heterostructures by using electric tools instead of external magnetic fields can lead to low-power memory devices. We observe the robust changes in magnetization states of a thin (about 30 nm) film of alpha-Fe covered by the naturally formed layer ( about 6 nm in thickness) of iron ohyhydroxides (FeOOH) under discharging a capacitor through the film. Strikingly, the magnetization vector is switchable by the discharge even with no any biasing field at room temperatures. In this electrically induced magnetization switching (EIMS) we reveal the key role of the FeOOH layer. We demonstrate experimental evidences that not the discharge current itself but the electric field (of the order of 10 kV/m) generated by this current is responsible for EIMS. The results reported here provide a plausible explanation of the observed phenomenon in terms of electric-field-induced weak ferromagnetism in the FeOOH layer and its coupling with the underlying alpha-Fe.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Current transport and thermoelectric properties of very high power factor Fe3O4 / SiO2 / p-type Si (001) devices

The current transport and thermoelectric properties of Fe3O4 / SiO2 / p-type Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300 K. We observe a sharp drop of the in-plane resistivity at 200K due to the onset of conduction along the Si / SiO2 interface related to tunneling of electrons from the Fe3O4 into the accumulation layer of holes at the Si / SiO2 interface, whose existence was confirmed by capacitance-voltage measurements and a two band analysis of the Hall effect. This is accompanied by a large increase of the Seebeck coefficient reaching +1000 μV/K at 300K that is related to holes in the p-type Si(001) and gives a power factor of 70 mW/K2m when the Fe3O4 layer thickness is reduced down to 150 nm. We show that most of the current flows in the Fe3O4 layer at 300 K, while the Fe3O4 / SiO2 / p-type Si(001) heterostructures behave like tunneling p-n junctions in the transverse direction.

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preprint2014arXiv

Very high thermoelectric power factor in a Fe3O4/SiO2/p-type Si(100)heterostructure

The thermoelectric and transport properties of a Fe3O4/SiO2/p-Si(100) heterostructure have been investigated between 100 and 300 K. Both Hall and Seebeck coefficients change sign from negative to positive with increasing temperature while the resistivity drops sharply due to tunneling of carriers into the p-Si(100). The low resistivity and large Seebeck coefficient of Si give a very high thermoelectric power factor of 25.5mW/K2m at 260K which is an underestimated, lower limit value and is related to the density of states and difference in the work functions of Fe3O4 and Si(100) that create an accumulation of majority holes at the p-Si/SiO2 interface

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preprint2013arXiv

Phase growth control in low temperature PLD Co:TiO2 films by pressure

This paper reports on the structural and optical properties of Co-doped TiO2 thin films grown onto (0001) Al2O3 substrates by non-reactive pulsed laser deposition (PLD) using argon as buffer gas. It is shown that by keeping constant the substrate temperature at as low as 310 C and varying only the background gas pressure between 7 Pa and 70 Pa, it is possible to grow either epitaxial rutile or pure anatase thin films, as well as films with a mixture of both polymorphs. The optical band gaps of the films are red shifted in comparison to the values usually reported for undoped TiO2, which is consistent with n-type doping of the TiO2 matrix. Such band gap red shift brings the absorption edge of the Co-doped TiO2 films into the visible region, which might favour their photocatalytic activity. Furthermore, the band gap red shift depends on the films phase composition, increasing with the increase of the Urbach energy for increasing rutile content.

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preprint2013arXiv

Structural, electrical and magnetic studies of Co:SnO2 and (Co,Mo):SnO2 films prepared by pulsed laser deposition

Here we report on the structural, optical, electrical and magnetic properties of Co-doped and (Co,Mo)-codoped SnO2 thin films deposited on r-cut sapphire substrates by pulsed laser deposition. Substrate temperature during deposition was kept at 500 C. X-ray diffraction analysis showed that the undoped and doped films are crystalline with predominant orientation along the [101] direction regardless of the doping concentration and doping element. Optical studies revealed that the presence of Mo reverts the blue shift trend observed for the Co-doped films. For the Co and Mo doping concentrations studied, the incorporation of Mo did not contribute to increase the conductivity of the films or to enhance the ferromagnetic order of the Co-doped films.

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preprint2011arXiv

Cr2O3 thin films grown at room temperature by low pressure laser chemical vapour deposition

Chromia (Cr2O3) has been extensively explored for the purpose of developing widespread industrial applications, owing to the convergence of a variety of mechanical, physical and chemical properties in one single oxide material. Various methods have been used for large area synthesis of Cr2O3 films. However, for selective area growth and growth on thermally sensitive materials, laser-assisted chemical vapour deposition (LCVD) can be applied advantageously. Here we report on the growth of single layers of pure Cr2O3 onto sapphire substrates at room temperature by low pressure photolytic LCVD, using UV laser radiation and Cr(CO)6 as chromium precursor. The feasibility of the LCVD technique to access selective area deposition of chromia thin films is demonstrated. Best results were obtained for a laser fluence of 120 mJ cm-2 and a partial pressure ratio of O2 to Cr(CO)6 of 1.0. Samples grown with these experimental parameters are polycrystalline and their microstructure is characterised by a high density of particles whose size follows a lognormal distribution. Deposition rates of 0.1 nm s-1 and mean particle sizes of 1.85 μm were measured for these films.

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