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J. Giapintzakis

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cond-mat.mtrl-sci cond-mat cond-mat.mes-hall

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preprint2014arXiv

Current transport and thermoelectric properties of very high power factor Fe3O4 / SiO2 / p-type Si (001) devices

The current transport and thermoelectric properties of Fe3O4 / SiO2 / p-type Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300 K. We observe a sharp drop of the in-plane resistivity at 200K due to the onset of conduction along the Si / SiO2 interface related to tunneling of electrons from the Fe3O4 into the accumulation layer of holes at the Si / SiO2 interface, whose existence was confirmed by capacitance-voltage measurements and a two band analysis of the Hall effect. This is accompanied by a large increase of the Seebeck coefficient reaching +1000 μV/K at 300K that is related to holes in the p-type Si(001) and gives a power factor of 70 mW/K2m when the Fe3O4 layer thickness is reduced down to 150 nm. We show that most of the current flows in the Fe3O4 layer at 300 K, while the Fe3O4 / SiO2 / p-type Si(001) heterostructures behave like tunneling p-n junctions in the transverse direction.

preprint2014arXiv

Very high thermoelectric power factor in a Fe3O4/SiO2/p-type Si(100)heterostructure

The thermoelectric and transport properties of a Fe3O4/SiO2/p-Si(100) heterostructure have been investigated between 100 and 300 K. Both Hall and Seebeck coefficients change sign from negative to positive with increasing temperature while the resistivity drops sharply due to tunneling of carriers into the p-Si(100). The low resistivity and large Seebeck coefficient of Si give a very high thermoelectric power factor of 25.5mW/K2m at 260K which is an underestimated, lower limit value and is related to the density of states and difference in the work functions of Fe3O4 and Si(100) that create an accumulation of majority holes at the p-Si/SiO2 interface

preprint2005arXiv

Negative Giant Longitudinal Magnetoresistance in NiMnSb/InSb: An interface effect

We report on the electrical and magneto-transport properties of the contact formed between polycrystalline NiMnSb thin films grown using pulsed laser deposition (PLD) and n-type degenerate InSb (100) substrates. A negative giant magnetoresistance (GMR) effect is observed when the external magnetic field is parallel to the surface of the film and to the current direction. We attribute the observed phenomenon to magnetic precipitates formed during the magnetic film deposition and confined to a narrow layer at the interface. The effect of these precipitates on the magnetoresistance depends on the thermal processing of the system.

preprint1997arXiv

C-axis Josephson Tunneling Between YBCO and Pb: Direct Evidence for Mixed Order Parameter Symmetry in a High-T_c Superconductor

We report a new class of $c$-axis Josephson tunneling experiments in which a conventional superconductor (Pb) is deposited across a single twin boundary of a YBa_2Cu_3O_{7-δ} crystal. We measure the critical current as a function of magnitude and angle of magnetic field applied in the plane of the junction. In all samples, we observe a clear experimental signature of an order parameter phase shift across the twin boundary. These results provide strong evidence for mixed $d$- and $s$-wave pairing in YBCO, with a reversal in the sign of the $s$-wave component across the twin boundary.