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O. Cavani

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cond-mat.supr-con cond-mat.mtrl-sci cond-mat.str-el physics.app-ph

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preprint2020arXiv

Effect of controlled point-like disorder induced by 2.5 MeV electron irradiation on nematic resistivity anisotropy of hole-doped (Ba,K)Fe $_2$ As $_2$

In-plane anisotropy of electrical resistivity was studied in samples of the hole-doped Ba $_{1-x}$ K $_x$ Fe $_2$ As $_2$ in the composition range $0.21 \leq x \leq 0.26$ where anisotropy changes sign. Low-temperature ( $\sim$ 20~K) irradiation with relativistic 2.5 MeV electrons was used to control the level of disorder and residual resistivity of the samples. Modification of the stress-detwinning technique enabled measurements of the same samples before and after irradiation, leading to conclusion of anisotropic character of predominantly inelastic scattering processes. Our main finding is that the resistivity anisotropy is of the same sign irrespective of residual resistivity, and remains the same in the orthorhombic $C_2$ phase above the re-entrant tetragonal transition. Unusual $T$ -linear dependence of the anisotropy $Δρ\equiv ρ_a(T)-ρ_b(T)$ is found in pristine samples with $x=$ 0.213 and $x=$ 0.219, without similar signatures in either $ρ_a(T)$ or $ρ_b(T)$ . We show that this feature can be reproduced by a phenomenological model of R.~M.~Fernandes {\it et al.} Phys. Rev. Lett. {\bf 107},217002 (2011). We speculate that onset of fluctuations of nematic order on approaching the instability towards the re-entrant tetragonal phase contributes to this unusual dependence.

preprint2020arXiv

Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics

We report on the effect of electron and proton irradiation on effective minority carrier lifetimes ( $τ_{eff}$ ) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay ( $μ$ W-PCD) method. We examine the dependence of $τ_{eff}$ on the p-type doping level and on electron and proton radiation fluences at 1 MeV. The measured $τ_{eff}$ before and after irradiation are used to estimate the minority carriers diffusion lengths, which is an important parameter for solar cell operation. We observe $τ_{eff}$ ranging from 50 to 230 $μ$ s for Ge doping levels between 1E17 and 1E16 at.cm $^{-3}$ , corresponding to diffusion lengths of 500-1400 $μ$ m. A separation of $τ_{eff}$ in Ge bulk lifetime and surface recombination velocity is conducted by irradiating Ge lifetime samples of different thicknesses. The possible radiation-induced defects are discussed on the basis of literature.

preprint2020arXiv

Electron irradiation effects on superconductivity in PdTe $_2$ : an application of a generalized Anderson theorem

Low temperature ( $\sim$ 20~K) electron irradiation with 2.5 MeV relativistic electrons was used to study the effect of controlled non-magnetic disorder on the normal and superconducting properties of the type-II Dirac semimetal PdTe $_2$ . We report measurements of longitudinal and Hall resistivity, thermal conductivity and London penetration depth using tunnel-diode resonator technique for various irradiation doses. The normal state electrical resistivity follows Matthiessen rule with an increase of the residual resistivity at a rate of $\sim$ 0.77 $μΩ$ cm/ $(\textrm{C}/\textrm{cm}^2)$ . London penetration depth and thermal conductivity results show that the superconducting state remains fully gapped. The superconducting transition temperature is suppressed at a non-zero rate that is about sixteen times slower than described by the Abrikosov-Gor'kov dependence, applicable to magnetic impurity scattering in isotropic, single-band $s$ -wave superconductors. To gain information about the gap structure and symmetry of the pairing state, we perform a detailed analysis of these experimental results based on insight from a generalized Anderson theorem for multi-band superconductors. This imposes quantitative constraints on the gap anisotropies for each of the possible pairing candidate states. We conclude that the most likely pairing candidate is an unconventional $A_{1g}^{+-}$ state. While we cannot exclude the conventional $A_{1g}^{++}$ and the triplet $A_{1u}$ , we demonstrate that these states require additional assumptions about the orbital structure of the disorder potential to be consistent with our experimental results, e.g., a ratio of inter- to intra-band scattering for the singlet state significantly larger than one. Due to the generality of our theoretical framework, we think that it will also be useful for irradiation studies in other spin-orbit-coupled multi-orbital systems.

preprint2016arXiv

Enhancement of Tc by point-like disorder and anisotropic gap in FeSe

A highly anisotropic superconducting gap is found in single crystals of FeSe by studying the London penetration depth, $Δλ$ , measured down to 50 mK in samples before and after 2.5 MeV electron irradiation. The gap minimum increases with introduced point - like disorder, indicating the absence of symmetry - imposed nodes. Surprisingly, the superconducting transition temperature, $T_c$ , \textit{increases} by 0.4 K from $T_{c0} \approx$ 8.8 K while the structural transition temperature, $T_s$ , \textit{decreases} by 0.9 K from $T_{s0} \approx$ 91.2 K after electron irradiation. We discuss several explanations for the $T_c$ enhancement, and propose that local strengthening of the pair interaction by irradiation-induced Frenkel defects most likely explains the phenomenon.

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O. Cavani

Research overview

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4 publications

Effect of controlled point-like disorder induced by 2.5 MeV electron irradiation on nematic resistivity anisotropy of hole-doped (Ba,K)Fe $_2$ As $_2$

Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics

Electron irradiation effects on superconductivity in PdTe $_2$ : an application of a generalized Anderson theorem

Enhancement of Tc by point-like disorder and anisotropic gap in FeSe

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O. Cavani

Research overview

Is this your work?

4 publications

Effect of controlled point-like disorder induced by 2.5 MeV electron irradiation on nematic resistivity anisotropy of hole-doped (Ba,K)Fe2_22​As2_22​

Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics

Electron irradiation effects on superconductivity in PdTe2_22​: an application of a generalized Anderson theorem

Enhancement of Tc by point-like disorder and anisotropic gap in FeSe

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Building this map preview

Effect of controlled point-like disorder induced by 2.5 MeV electron irradiation on nematic resistivity anisotropy of hole-doped (Ba,K)Fe $_2$ As $_2$

Electron irradiation effects on superconductivity in PdTe $_2$ : an application of a generalized Anderson theorem