Researcher profile

Norman J. M. Horing

Norman J. M. Horing contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Plasmon Excitations for Encapsulated Graphene

We have developed an analytical formulation to calculate the plasmon dispersion relation for a two-dimensional layer which is encapsulated within a narrow spatial gap between two bulk half-space plasmas. This is based on a solution of the inverse dielectric function integral equation within the random-phase approximation (RPA). We take into account the nonlocality of the plasmon dispersion relation for both gapped and gapless graphene as the sandwiched two-dimensional (2D) semiconductor plasma. The associated nonlocal graphene plasmon spectrum coupled to the "sandwich" system is exhibited in density plots, which show a linear mode and a pair of depolarization modes shifted from the bulk plasma frequency.

preprint2011arXiv

Seebeck effect in dilute two-dimensional electron systems: temperature dependencies of diffusion and phonon-drag thermoelectric powers

Considering screeening of electron scattering interactions in terms of the finite-temperature STLS theory and solving the linearized Boltzmann equation (with no appeal to a relaxation time approximation), we present a theoretical analysis of the low-temperature Seebeck effect in two-dimensional semiconductors with dilute electron densities. We find that the temperature ($T$) dependencies of the diffusion and phonon-drag thermoelectric powers ($S_d$ and $S_g$) can no longer be described by the conventional simple power-laws. As temperature increases, $|S_d|/T$ decreases when $T\gtrsim 0.1 ε_F$ ($ε_F$ is the Fermi energy), while $|S_g|$ first increases and then falls, resulting a peak located at a temperature between Bloch-Grüneisen temperature and $ε_F$.