Source author record

Norbert Wermes

Norbert Wermes appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

physics.ins-det hep-ex cond-mat.mtrl-sci physics.med-ph

Catalog footprint

What is connected

9works

4topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2020arXiv

DMAPS Monopix developments in large and small electrode designs

LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams.

preprint2016arXiv

Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade

The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.

preprint2015arXiv

A Monolithic active pixel sensor for ionizing radiation using a 180nm HV-SOI process

An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry witch mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.

preprint2015arXiv

From Hybrid to CMOS Pixels ... a possibility for LHC's pixel future?

Hybrid pixel detectors have been invented for the LHC to make tracking and vertexing possible at all in LHC's radiation intense environment. The LHC pixel detectors have meanwhile very successfully fulfilled their promises and R\&D for the planned HL-LHC upgrade is in full swing, targeting even higher ionising doses and non-ionising fluences. In terms of rate and radiation tolerance hybrid pixels are unrivaled. But they have disadvantages as well, most notably material thickness, production complexity, and cost. Meanwhile also active pixel sensors (DEPFET, MAPS) have become real pixel detectors but they would by far not stand the rates and radiation faced from HL-LHC. New MAPS developments, so-called DMAPS (depleted MAPS) which are full CMOS-pixel structures with charge collection in a depleted region have come in the R\&D focus for pixels at high rate/radiation levels. This goal can perhaps be realised exploiting HV technologies, high ohmic substrates and/or SOI based technologies. The paper covers the main ideas and some encouraging results from prototyping R\&D, not hiding the difficulties.

preprint2014arXiv

DMAPS: a fully depleted monolithic active pixel sensor - analog performance characterization

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $μ$m) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal is small ($\approx$ 1000 e$^-$) and the radiation tolerance is much below the LHC requirements by factors of 100 to 1000. In this paper we present the development of a fully Depleted Monolithic Active Pixel Sensors (DMAPS) based on a high resistivity substrate allowing the creation of a fully depleted detection volume. This concept overcomes the inherent limitations of charge collection by diffusion in the standard MAPS designs. We present results from a test chip EPCB01 designed in a commercial 150 nm CMOS technology. The technology provides a thin (50 $μ$m) high resistivity n-type silicon substrate as well as an additional deep p-well which allows to integrate full CMOS circuitry inside the pixel. Different matrix types with several variants of collection electrodes have been implemented. Measurements of the analog performance of this first implementation of DMAPS pixels will be presented.

preprint2012arXiv

Signal and noise of Diamond Pixel Detectors at High Radiation Fluences

CVD diamond is an attractive material option for LHC vertex detectors because of its strong radiation-hardness causal to its large band gap and strong lattice. In particular, pixel detectors operating close to the interaction point profit from tiny leakage currents and small pixel capacitances of diamond resulting in low noise figures when compared to silicon. On the other hand, the charge signal from traversing high energy particles is smaller in diamond than in silicon by a factor of about 2.2. Therefore, a quantitative determination of the signal-to-noise ratio (S/N) of diamond in comparison with silicon at fluences in excess of 10$^{15}$ n$_{eq}$ cm$^{-2}$, which are expected for the LHC upgrade, is important. Based on measurements of irradiated diamond sensors and the FE-I4 pixel readout chip design, we determine the signal and the noise of diamond pixel detectors irradiated with high particle fluences. To characterize the effect of the radiation damage on the materials and the signal decrease, the change of the mean free path $λ_{e/h}$ of the charge carriers is determined as a function of irradiation fluence. We make use of the FE-I4 pixel chip developed for ATLAS upgrades to realistically estimate the expected noise figures: the expected leakage current at a given fluence is taken from calibrated calculations and the pixel capacitance is measured using a purposely developed chip (PixCap). We compare the resulting S/N figures with those for planar silicon pixel detectors using published charge loss measurements and the same extrapolation methods as for diamond. It is shown that the expected S/N of a diamond pixel detector with pixel pitches typical for LHC, exceeds that of planar silicon pixels at fluences beyond 10$^{15}$ particles cm$^{-2}$, the exact value only depending on the maximum operation voltage assumed for irradiated silicon pixel detectors.

preprint2010arXiv

PIXEL 2010 - a Resume

The Pixel 2010 conference focused on semiconductor pixel detectors for particle tracking/vertexing as well as for imaging, in particular for synchrotron light sources and XFELs. The big LHC hybrid pixel detectors have impressively started showing their capabilities. X-ray imaging detectors, also using the hybrid pixel technology, have greatly advanced the experimental possibilities for diiffraction experiments. Monolithic or semi-monolithic devices like CMOS active pixels and DEPFET pixels have now reached a state such that complete vertex detectors for RHIC and superKEKB are being built with these technologies. Finally, new advances towards fully monolithic active pixel detectors, featuring full CMOS electronics merged with efficient signal charge collection, exploiting standard CMOS technologies, SOI and/or 3D integration, show the path for the future. This résumé attempts to extract the main statements of the results and developments presented at this conference.

preprint2004arXiv

Trends in Pixel Detectors: Tracking and Imaging

For large scale applications, hybrid pixel detectors, in which sensor and read-out IC are separate entities, constitute the state of the art in pixel detector technology to date. They have been developed and start to be used as tracking detectors and also imaging devices in radiography, autoradiography, protein crystallography and in X-ray astronomy. A number of trends and possibilities for future applications in these fields with improved performance, less material, high read-out speed, large radiation tolerance, and potential off-the-shelf availability have appeared and are momentarily matured. Among them are monolithic or semi-monolithic approaches which do not require complicated hybridization but come as single sensor/IC entities. Most of these are presently still in the development phase waiting to be used as detectors in experiments. The present state in pixel detector development including hybrid and (semi-)monolithic pixel techniques and their suitability for particle detection and for imaging, is reviewed.

preprint2003arXiv

Single Photon Counting X-ray Imaging with Si and CdTe Single Chip Pixel Detectors and Multichip Pixel Modules

Multichip modules (MCM) with 4 single photon counting MPEC 2.3 chips bump bonded to 1.3 cm x 1.3 cm large CdTe and Si semiconductor sensors as well as to single chip pixel detectors have been successfully built and operated. The MPEC 2.3 chip provides a pixel count rate up to 1 MHz with a large dynamic range of 18 bit, 2 counters and energy windowing with continuously adjustable thresholds. Each MPEC has 32 x 32 pixels of 200 um x 200 um pixel size. For a MCM the 4 chips are arranged in a 2 x 2 array which leads to a 64 x 64 sensor pixel geometry. The MCM construction is described, and the imaging performance of the different detectors is shown. As readout system a newly developed USB system has been used.