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Noa Marom

Noa Marom appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.chem-phphysics.comp-phcond-mat.mes-hallcond-mat.str-elquant-ph

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Published work

12 published item(s)

preprint2026arXiv

Visualization of Tunable Electronic Structure of Monolayer TaIrTe$_4$

Monolayer TaIrTe$_4$ has emerged as an attractive material platform to study intriguing phenomena related to topology and strong electron correlations. Recently, strong interactions have been demonstrated to induce strain and dielectric screening tunable topological phases such as quantum spin Hall insulator (QSHI), trivial insulator, higher-order topological insulator, and metallic phase, in the ground state of monolayer TaIrTe$_4$. Moreover, charge dosing has been demonstrated to convert the QSHI into a dual QSHI state. Although the band structure of monolayer TaIrTe$_4$ is central to interpreting its topological phases in transport experiments, direct experimental access to its intrinsic electronic structure has so far remained elusive. Here we report direct measurements of the monolayer TaIrTe$_4$ band structure using spatially resolved micro-angle-resolved photoemission spectroscopy (microARPES) with micrometre-scale resolution. The observed dispersions show quantitative agreement with density functional theory calculations using the Heyd-Scuseria-Ernzerhof hybrid functional, establishing the insulating ground state and revealing no evidence for strong electronic correlations. We further uncover a pronounced electron-hole asymmetry in the doping response. Whereas hole doping is readily induced by electrostatic gating, attempts to introduce electrons via gating or alkali metal deposition do not yield a rigid upward shift of the Fermi level. Fractional charge calculations demonstrate that added electrons instead drive band renormalization and shrink the band gap. Taken together, our experimental and theoretical results identify the microscopic mechanism by which induced charges reshape the band topology of monolayer TaIrTe$_4$, showing that doping can fundamentally alter the electronic structure beyond the rigid band behaviour that is typically assumed.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

First Principles Study of the Electronic Structure of the Ni$_2$MnIn/InAs and Ti$_2$MnIn/InSb interfaces

We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti$_2$MnIn and Ni$_2$MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 $μ_B$ are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor also decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti$_2$MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni$_2$MnIn induces in the InAs. This is explained by the position of the transition metal $d$ states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Structure Prediction of Epitaxial Organic Interfaces with Ogre, Demonstrated for TCNQ on TTF

Highly ordered epitaxial interfaces between organic semiconductors are considered as a promising avenue for enhancing the performance of organic electronic devices including solar cells, light emitting diodes, and transistors, thanks to their well-controlled, uniform electronic properties and high carrier mobilities. Although the phenomenon of organic epitaxy has been known for decades, computational methods for structure prediction of epitaxial organic interfaces have lagged far behind the existing methods for their inorganic counterparts. We present a method for structure prediction of epitaxial organic interfaces based on lattice matching followed by surface matching, implemented in the open-source Python package, Ogre. The lattice matching step produces domain-matched interfaces, where commensurability is achieved with different integer multiples of the substrate and film unit cells. In the surface matching step, Bayesian optimization (BO) is used to find the interfacial distance and registry between the substrate and film. The BO objective function is based on dispersion corrected deep neural network interatomic potentials, shown to be in excellent agreement with density functional theory (DFT). The application of Ogre is demonstrated for an epitaxial interface of 7,7,8,8-tetracyanoquinodimethane (TCNQ) on tetrathiafulvalene (TTF), whose electronic structure has been probed by ultraviolet photoemission spectroscopy (UPS), but whose structure had been hitherto unknown [Organic Electronics 48, 371 (2017)]. We find that TCNQ(001) on top of TTF(100) is the most stable interface configuration, closely followed by TCNQ(010) on top of TTF(100). The density of states, calculated using DFT, is in excellent agreement with UPS, including the presence of an interface charge transfer state.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Scale-dependent optimized homoepitaxy of InAs(111)A

We combined in-situ scanning tunneling microscopy (STM) with the conventional growth characterization methods of atomic force microscopy (AFM) and reflection high energy electron diffraction (RHEED) to simultaneously assess atomic-scale impurities and the larger-scale surface morphology of molecular beam epitaxy (MBE) grown homoepitaxial InAs(111)A. By keeping a constant substrate temperature and indium flux while increasing the As$_2$ flux, we find two differing MBE growth parameter regions for optimized surface roughness on the macro and atomic scale. In particular, we show that a pure step-flow regime with strong suppression of hillock formation can be achieved, even on substrates without intentional offcut. On the other hand, an indium adatom deficient, low atomic defect surface can be observed for a high hillock density. We identify the main remaining point defect on the latter surface by comparison to STM simulations. Furthermore, we provide a method for extracting root-mean-square surface roughness values and discuss their use for surface quality optimization by comparison to scale-dependent, technologically relevant surface metrics. Finally, mapping the separately optimized regions of the growth parameter space should provide a guide for future device engineering involving epitaxial InAs(111)A growth.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic structure of InAs and InSb surfaces: density functional theory and angle-resolved photoemission spectroscopy

The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, we study the electronic structure of InAs(001), InAs(111), and InSb(110) surfaces using a combination of density functional theory (DFT) and angle-resolved photoemission spectroscopy (ARPES). We were able to perform large-scale first principles simulations and capture effects of different surface reconstructions by using DFT calculations with a machine-learned Hubbard U correction [npj Comput. Mater. 6, 180 (2020)]. To facilitate direct comparison with ARPES results, we implemented a "bulk unfolding" scheme by projecting the calculated band structure of a supercell surface slab model onto the bulk primitive cell. For all three surfaces, we find a good agreement between DFT calculations and ARPES. For InAs(001), the simulations clarify the effect of the surface reconstruction. Different reconstructions are found to produce distinctive surface states. For InAs(111) and InSb(110), the simulations help elucidate the effect of oxidation. Owing to larger charge transfer from As to O than from Sb to O, oxidation of InAs(111) leads to significant band bending and produces an electron pocket, whereas oxidation of InSb(110) does not. Our combined theoretical and experimental results may inform the design of quantum devices based on InAs and InSb semiconductors, e.g., topological qubits utilizing the Majorana zero modes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Topological Properties of SnSe/EuS and SnTe/CaTe Interfaces

We use density functional theory calculations to study the electronic structure of epitaxial (111) interfaces of the topological crystalline insulators SnSe and SnTe with the magnetic insulator EuS and the non-magnetic insulator CaTe, respectively. We consider both interface slab models with a vacuum region and periodic heterostructures without vacuum. We find that gaps of 21 meV at the $Γ$ point and 9 meV at the M point arise in the topological state at the SnSe/EuS interface, due to the magnetic proximity effect, which breaks the time reversal symmetry. The surface state at $Γ$ is shifted below the Fermi level by 88 meV and the surface state at M is shifted above the Fermi level by 47 meV, owing to band bending at the interface. By comparison, the topological state at the interface of SnTe/CaTe is unperturbed by the presence of non-magnetic CaTe.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Genarris 2.0: A Random Structure Generator for Molecular Crystals

Genarris is an open-source Python package for generating random molecular crystal structures with physical constraints for seeding crystal structure prediction algorithms and training machine learning models. Here we present a new version of the code, containing several major improvements. An MPI-based parallelization scheme has been implemented, which facilitates the seamless sequential execution of user-defined workflows. A new method for estimating the unit cell volume based on the single molecule structure has been developed using a machine-learned model trained on experimental structures. A new algorithm has been implemented for generating crystal structures with molecules occupying special Wyckoff positions. A new hierarchical structure check procedure has been developed to detect unphysical close contacts efficiently and accurately. New intermolecular distance settings have been implemented for strong hydrogen bonds. To demonstrate these new features, we study two specific cases: benzene and glycine. For all polymorphs, the final pool either contained the experimental structure, or structures with similar lattice parameters, symmetry, and packing motifs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Computational Design of Nanoclusters by Property-Based Genetic Algorithms: Tuning the Electronic Properties of (TiO$_2$)$_n$ Clusters

In order to design clusters with desired properties, we have implemented a suite of genetic algorithms tailored to optimize for low total energy, high vertical electron affinity (VEA), and low vertical ionization potential (VIP). Applied to (TiO$_2$)$_n$ clusters, the property-based optimization reveals the underlying structure-property relations and the structural features that may serve as active sites for catalysis. High VEA and low VIP are correlated with the presence of several dangling-O atoms and their proximity, respectively. We show that the electronic properties of (TiO$_2$)$_n$ up to n=20 correlate more strongly with the presence of these structural features than with size.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

A Benchmark of GW Methods for Azabenzenes: Is the GW Approximation Good Enough?

Many-body perturbation theory in the GW approximation is a useful method for describing electronic properties associated with charged excitations. A hierarchy of GW methods exists, starting from non-self-consistent G0W0, through partial self-consistency in the eigenvalues (ev-scGW) and in the Green function (scGW0), to fully self-consistent GW (scGW). Here, we assess the performance of these methods for benzene, pyridine, and the diazines. The quasiparticle spectra are compared to photoemission spectroscopy (PES) experiments with respect to all measured particle removal energies and the ordering of the frontier orbitals. We find that the accuracy of the calculated spectra does not match the expectations based on their level of self-consistency. In particular, for certain starting points G0W0 and scGW0 provide spectra in better agreement with the PES than scGW.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electrodynamic Response and Stability of Molecular Crystals

We show that electrodynamic dipolar interactions, responsible for long-range fluctuations in matter, play a significant role in the stability of molecular crystals. Density functional theory calculations with van der Waals interactions determined from a semilocal "atom-in-a-molecule" model result in a large overestimation of the dielectric constants and sublimation enthalpies for polyacene crystals from naphthalene to pentacene, whereas an accurate treatment of non-local electrodynamic response leads to an agreement with the measured values for both quantities. Our findings suggest that collective response effects play a substantial role not only for optical excitations, but also for cohesive properties of non-covalently bound molecular crystals.

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preprint2012arXiv

Many-Body Dispersion Interactions in Molecular Crystal Polymorphism

Polymorphs in molecular crystals are often very close in energy, yet they may possess markedly different physical and chemical properties. The understanding and prediction of polymorphism is of paramount importance for a variety of applications, including pharmaceuticals, non-linear optics, and hydrogen storage. Here, we show that the non-additive many-body dispersion (MBD) energy beyond the standard pairwise approximation is crucial for the correct qualitative and quantitative description of polymorphism in molecular crystals. This is rationalized by the sensitive dependence of the MBD energy on the polymorph geometry and the ensuing dynamic electric fields inside molecular crystals. We use the glycine crystal as a fundamental and stringent benchmark case to demonstrate the accuracy of the DFT+MBD method.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Stacking and Registry Effects in Layered Materials: The Case of Hexagonal Boron Nitride

The interlayer sliding energy landscape of hexagonal boron nitride (h-BN) is investigated via a van der Waals corrected density functional theory approach. It is found that the main role of the van der Waals forces is to "anchor" the layers at a fixed distance, whereas the electrostatic forces dictate the optimal stacking mode and the interlayer sliding energy. A nearly free-sliding path is identified, along which bandgap modulations of ~0.6 eV are obtained. We propose a simple geometrical model that quantifies the registry matching between the layers and captures the essence of the corrugated h-BN interlayer energy landscape. The simplicity of this phenomenological model opens the way to the modeling of complex layered structures, such as carbon and boron nitride nanotubes.

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