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Researcher profile

Nithin Abraham

Nithin Abraham contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phquant-ph

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Published work

5 published item(s)

preprint2022arXiv

A High-Quality Entropy Source Using van der Waals Heterojunction for True Random Number Generation

Generators of random sequences used in high-end applications such as cryptography rely on entropy sources for their indeterminism. Physical processes governed by the laws of quantum mechanics are excellent sources of entropy available in nature. However, extracting enough entropy from such systems for generating truly random sequences is challenging while maintaining the feasibility of the extraction procedure for real-world applications. Here, we present a compact and an all-electronic van der Waals (vdW) heterostructure-based device capable of detecting discrete charge fluctuations for extracting entropy from physical processes and use it for the generation of independent and identically distributed (IID) true random sequences. We extract a record high value ($>0.98~bits/bit$) of min-entropy using the proposed scheme. We demonstrate an entropy generation rate tunable over multiple orders of magnitude and show the persistence of the underlying physical process for temperatures ranging from cryogenic to ambient conditions. We verify the random nature of the generated sequences using tests such as NIST SP 800-90B standard and other statistical measures and verify the suitability our random sequence for cryptographic applications using the NIST SP 800-22 standard. The generated random sequences are then used in implementing various randomized algorithms without any preconditioning steps.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Contact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire

Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology node. In particular, the junctionless nanowire transistors are highly scalable with reduced variability due to avoidance of steep source/drain junction formation by ion implantation. Here we demonstrate a dual-gated junctionless nanowire \emph{p}-type field effect transistor using tellurium nanowire as the channel. The dangling-bond-free surface due to the unique helical crystal structure of the nanowire, coupled with an integration of dangling-bond-free, high quality hBN gate dielectric, allows us to achieve a phonon-limited field effect hole mobility of $570\,\mathrm{cm^{2}/V\cdot s}$ at 270 K, which is well above state-of-the-art strained Si hole mobility. By lowering the temperature, the mobility increases to $1390\,\mathrm{cm^{2}/V\cdot s}$ and becomes primarily limited by Coulomb scattering. \txc{The combination of an electron affinity of $\sim$4 eV and a small bandgap of tellurium provides zero Schottky barrier height for hole injection at the metal-contact interface}, which is remarkable for reduction of contact resistance in a highly scaled transistor. Exploiting these properties, coupled with the dual-gated operation, we achieve a high drive current of $216\,\mathrm{μA/μm}$ while maintaining an on-off ratio in excess of $2\times10^4$. The findings have intriguing prospects for alternate channel material based next-generation electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anomalous Stark Shift of Excitonic Complexes in Monolayer Semiconductor

Monolayer transition metal dichalcogenide semiconductors host strongly bound two-dimensional excitonic complexes, and form an excellent platform for probing many-body physics through manipulation of Coulomb interaction. Quantum confined Stark effect is one of the routes to dynamically tune the emission line of these excitonic complexes. In this work, using a high quality graphene/hBN/WS$_2$/hBN/Au vertical heterojunction, we demonstrate for the first time, an out-of-plane electric field driven change in the sign of the Stark shift from blue to red for four different excitonic species, namely, the neutral exciton, the charged exciton (trion), the charged biexciton, and the defect-bound exciton. Such universal non-monotonic Stark shift with electric field arises from a competition between the conventional quantum confined Stark effect driven red shift and a suppressed binding energy driven anomalous blue shift of the emission lines, with the latter dominating in the low field regime. We also find that the encapsulating environment of the monolayer TMDC plays an important role in wave function spreading, and hence in determining the magnitude of the blue Stark shift. The results for neutral and charged excitonic species are in excellent agreement with calculations from Bethe-Salpeter Equation that uses seven-band per spin tight binding Hamiltonian. The findings have important implications in probing many-body interaction in the two dimension as well as in developing layered semiconductor based tunable optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-tunable trion switch for excitonic device applications

Trions are excitonic species with a positive or negative charge, and thus, unlike neutral excitons, the flow of trions can generate a net detectable charge current. Trions under favourable doping conditions can be created in a coherent manner using resonant excitation. In this work, we exploit these properties to demonstrate a gate controlled trion switch in a few-layer graphene/monolayer WS2/monolayer graphene vertical heterojunction. By using a high resolution spectral scan through a temperature controlled variation of the bandgap of the WS2 sandwich layer, we obtain a gate voltage dependent vertical photocurrent strongly relying on the spectral position of the excitation, and the photocurrent maximizes when the excitation energy is resonant with the trion peak position. Further, the resonant photocurrent thus generated can be effectively controlled by a back gate voltage applied through the incomplete screening of the bottom monolayer graphene, and the photocurrent strongly correlates with the gate dependent trion intensity, while the non-resonant photocurrent exhibits only a weak gate dependence -unambiguously proving a trion driven photocurrent generation under resonance. We estimate a sub-100 fs switching time of the device. The findings are useful towards demonstration of ultra-fast excitonic devices in layered materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Unified benchmarking and characterization protocol for nanomaterial-based heterogeneous photodetector technologies

Over the last few years, there has been a rapid growth towards demonstrating highly sensitive, fast photodetectors using photoactive nano-materials. As with any other developing and highly inter-disciplinary field, the existing reports exhibit a large spread in the data due to less optimized materials and non-standardized characterization protocols. This calls for a streamlined performance benchmarking requirement to accelerate technological adoption of the promising candidates. The goal of this paper is four-fold: (i) to address the key challenges to perform such benchmarking exercise; (ii) to elucidate the right figures of merit to look for, and in particular, to demonstrate that noise-equivalent-power ($N\!E\!P$) is a more reliable sensitivity metric than other commonly used ones, such as responsivity ($R$) and specific detectivity ($D^*$); (iii) to propose $N\!E\!P$ versus frequency of operation ($f$) as a single, unified benchmarking chart that could be used for apple-to-apple comparison among heterogeneous detector technologies; and (iv) to propose a simple, yet streamlined characterization protocol that can be followed while reporting photodetector performance.

0 citations0 reviewsNo code linkedOpen access