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Researcher profile

Nisha Shahi

Nisha Shahi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2022arXiv

Anti-site disorder and Berry curvature driven anomalous Hall effect in spin gapless semiconducting Mn2CoAl Heusler compound

Spin gapless semiconductors exhibit a finite band gap for one spin channel and closed gap for other spin channel, emerged as a new state of magnetic materials with a great potential for spintronic applications. The first experimental evidence for the spin gapless semiconducting behavior was observed in an inverse Heusler compound Mn2CoAl. Here, we report a detailed investigation of the crystal structure and anomalous Hall effect in the Mn2CoAl using experimental and theoretical studies. The analysis of the high-resolution synchrotron x-ray diffraction data shows anti-site disorder between Mn and Al atoms within the inverse Heusler structure. The temperature-dependent resistivity shows semiconducting behavior and follows Mooijs criteria for disordered metal. Scaling behavior of the anomalous Hall resistivity suggests that the anomalous Hall effect in the Mn2CoAl is primarily governed by intrinsic mechanism due to the Berry curvature in momentum space. The experimental intrinsic anomalous Hall conductivity (AHC) is found to be 35 S/cm, which is considerably larger than the theoretically predicted value for ordered Mn2CoAl. Our first-principle calculations conclude that the anti-site disorder between Mn and Al atoms enhances the Berry curvature and hence the value of intrinsic AHC, which is in a very well agreement with the experiment.

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preprint2022arXiv

Atomic disorder and Berry phase driven anomalous Hall effect in Co2FeAl Heusler compound

Co2-based Heusler compounds are the promising materials for the spintronics application due to their high Curie temperature, large spin-polarization, large magnetization density, and exotic transport properties. In the present manuscript, we report the anomalous Hall effect (AHE) in a polycrystalline Co2FeAl Heusler compound using combined experimental and theoretical studies. The Rietveld analysis of high-resolution synchrotron x-ray diffraction data reveals a large degree (~50 %) of antisite disorder between Fe and Al atoms. The analysis of anomalous transport data provides the experimental anomalous Hall conductivity (AHC) about 227 S/cm at 2 K with an intrinsic contribution of 155 S/cm, which has nearly constant variation with temperature. The detailed scaling analysis of anomalous Hall resistivity suggests that the AHE in Co2FeAl is governed by the Berry phase driven intrinsic mechanism. Our theoretical calculations reveal that the disorder present in Co2FeAl compound enhances the Berry curvature induced intrinsic AHC.

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preprint2021arXiv

Experimental and computational approaches to study the high temperature thermoelectric properties of novel topological semimetal CoSi

Here, we study the thermoelectric properties of topological semimetal CoSi in the temperature range $300-800$ K by using combined experimental and density functional theory (DFT) based methods. CoSi is synthesized using arc melting technique and the Rietveld refinement gives the lattice parameters of a = b = c = 4.445 Å. The measured values of Seebeck coefficient (S) shows the non-monotonic behaviour in the studied temperature range with the value of $\sim-$81 $μ$V/K at room temperature. The $|S|$ first increases till 560 K ($\sim-$93 $μ$V/K) and then decreases up to 800 K ($\sim-$84 $μ$V/K) indicating the dominating n-type behaviour in the full temperature range. The electrical conductivity, $σ$ (thermal conductivity, $κ$) shows the monotonic decreasing (increasing) behaviour with the values of $\sim$5.2$\times 10^{5}$ (12.1 W/m-K) and $\sim$3.6$\times 10^{5}$ (14.2 W/m-K) $Ω^{-1}m^{-1}$ at 300 K and 800 K, respectively. The $κ$ exhibits the temperature dependency as, $κ\propto T^{0.16}$. The DFT based Boltzmann transport theory is used to understand these behaviour. The multi-band electron and hole pockets appear to be mainly responsible for deciding the temperature dependent transport behaviour. Specifically, the decrease in the $|S|$ above 560 K and change in the slope of $σ$ around 450 K are due to the contribution of thermally generated charge carriers from the hole pockets. The temperature dependent relaxation time is computed which shows temperature dependency of $1/T^{0.35}$. Present study suggests that electronic band-structure obtained from DFT provides reasonably good estimate of the transport coefficients of CoSi in the high temperature region of $300-800$ K.

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