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Researcher profile

Nikolai Kuldin

Nikolai Kuldin contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-ph

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Published work

3 published item(s)

preprint2020arXiv

Electrical and optical properties of hydrated amorphous vanadium oxide

Electrical and optical properties of amorphous vanadium oxide thin films obtained by electrochemical anodic oxidation are studied. It is shown that under cathodic polarization the hydrogen insertion into vanadium oxide from an electrolyte occurs. Metal-insulator transition in amorphous HxVO2 is found to be preserved up to high concentration (x ~ 1.5) of hydrogen. Memory switching with the N-type negative differential resistance, associated with the H+ ionic transfer, is observed in "V/hydrated amorphous vanadium oxide/Au" sandwich structures.

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preprint2020arXiv

Electrical conductivity of vanadium dioxide switching channel

The electrical conductivity of the switching channel of vanadium dioxide thin-film sandwich structures is studied over a wide temperature range (15-300 K). It is shown that the electrical resistance of the channel varies with temperature as R~exp(aT-b/T) in the high-temperature region (above 70 K). The experimental results are discussed from the viewpoint of the small polaron hopping conduction theory which takes into account the influence of thermal lattice vibrations onto the resonance integral.

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preprint2020arXiv

Influence of doping on the properties of vanadium oxide gel films

Effect of doping with H and W on the properties of V2O5 and VO2 derived from V2O5 gel has been studied. It is shown that the treatment of V2O5 in low-temperature RF hydrogen plasma for 1 to 10 min. leads to either hydration of vanadium pentoxide or its reduction (depending on the treatment conditions) to lower vanadium oxides. For some samples, which are subject to plasma treatment in the discharge active zone, a non-ordinary temperature dependence of resistance, with a maxi-mum at T ~ 100 K, is observed. For W-doped VO2 films, it is shown that substitution of V4+ with W6+ results in a decrease of the temperature of metal-insulator transition. Also, it has been shown that the doping of the initial films with ~3 at.% of W reduces the statistical scatter in the thresh-old parameters of the switching devices with S-shaped I-V characteristics on the basis of V2O5 gel films.

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