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Nicolas Roisin

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preprint2022arXiv

Low-Power Silicon Strain Sensor Based on CMOS Current Reference Topology

A strain sensor inspired by a Widlar self-biased current source topology called $β$-multiplier is developed to obtain a strain-dependent reference current with high supply rejection. The sensor relies on the piezoresistive effect in the silicon MOS transistors that form the current reference circuit. The device behavior is analytically computed and verified with experimental measurements under four-point bending test. A basic implementation with an integrated resistor reaches a strain sensitivity of 2.54 nA/$με$ (gauge factor of 324) for a temperature sensitivity of 52.06 nA/°C. A more advanced full-transistor circuit based on current subtraction principle is furthered implemented in order to reach strain sensitivity up to 12.02 nA/$με$ (gauge factor of 1773) and temperature sensitivity of -28.72 nA/°C. This implementation includes a CMOS active load to tune the strain and temperature sensitivities with a total power consumption between 20 and 150 $μ$W.

preprint2021arXiv

Indirect light absorption model for highly strained silicon infrared sensors

The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and include the effects of tensile and compressive uniaxial strains. The model is based on material properties such as the bandgap, the conduction and valence band density-of-states effective masses, and the phonon frequencies, which are obtained from first principles including strain up to +2% along the [110] and [111] directions. We show that the limit of absorption can increase from 1.14 (1.09) to 1.35 $μ$m (0.92 eV) under 2% strain and that the absorption increases by a factor of 55 for the zero-strain cutoff wavelength of 1.14 $μ$m when a 2% compressive strain is applied in the [110] direction. We demonstrate that this effect is mainly due to the impact of strain on the electronic bandgaps of silicon, directly followed by the valence band density-of-states effective mass.