Researcher profile

Nicolas Bergeal

Nicolas Bergeal contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

From low-field Sondheimer oscillations to high-field very large and linear magnetoresistance in a SrTiO$_3$-based two-dimensional electron gas

Quantum materials harbor a cornucopia of exotic transport phenomena challenging our understanding of condensed matter. Among these, a giant, non-saturating linearmagnetoresistance (MR) has been reported in various systems, from Weyl semi-metals to topological insulators. Its origin is often ascribed to unusual band structure effects but it may also be caused by extrinsic sample disorder. Here, we report a very large linear MR in a SrTiO$_3$ two-dimensional electron gas and, by combining transport measurements with electron spectro-microscopy, show that it is caused by nanoscale inhomogeneities that are self-organized during sample growth. Our data also reveal semi-classical Sondheimer oscillations arising from interferences between helicoidal electron trajectories, from which we determine the 2DEG thickness. Our results bring insight into the origin of linear MR in quantum materials, expand the range of functionalities of oxide 2DEGs and suggest exciting routes to explore the interaction of linear MR with features like Rashba spin-orbit coupling.

preprint2020arXiv

Dynamic properties of high-Tc superconducting nano-junctions made with a focused helium ion beam

The Josephson junction (JJ) is the corner stone of superconducting electronics and quantum information processing. While the technology for fabricating low $T_{c}$ JJ is mature and delivers quantum circuits able to reach the "quantum supremacy", the fabrication of reproducible and low-noise high-$T_{c}$ JJ is still a challenge to be taken up. Here we report on noise properties at RF frequencies of recently introduced high-$T_{c}$ Josephson nano-junctions fabricated by mean of a Helium ion beam focused at sub-nanometer scale on a $\mathrm{YBa}_2\mathrm{Cu}_3\mathrm{O}_7$ thin film. We show that their current-voltage characteristics follow the standard Resistively-Shunted-Junction (RSJ) circuit model, and that their characteristic frequency $f_{c}=(2e/h)I_{c}R_{n}$ reaches $\sim 300$ GHz at low temperature. Using the "detector response" method, we evidence that the Josephson oscillation linewidth is only limited by the thermal noise in the RSJ model for temperature ranging from $T\sim 20$ K to $75$ K. At lower temperature and for the highest He irradiation dose, the shot noise contribution must also be taken into account when approaching the tunneling regime. We conclude that these Josephson nano-junctions present the lowest noise level possible, which makes them very promising for future applications in the microwave and terahertz regimes.