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Nicola Zorzi

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Published work

7 published item(s)

preprint2021arXiv

The X/Gamma-ray Imaging Spectrometer (XGIS) on-board THESEUS: design, main characteristics, and concept of operation

THESEUS is one of the three missions selected by ESA as fifth medium class mission (M5) candidates in its Cosmic Vision science program, currently under assessment in a phase A study with a planned launch date in 2032. THESEUS is designed to carry on-board two wide and deep sky monitoring instruments for X/gamma-ray transients detection: a wide-field soft X-ray monitor with imaging capability (Soft X-ray Imager, SXI, 0.3 - 5 keV), a hard X-ray, partially-imaging spectroscopic instrument (X and Gamma Imaging Spectrometer, XGIS, 2 keV - 10 MeV), and an optical/near-IR telescope with both imaging and spectroscopic capability (InfraRed Telescope, IRT, 0.7 - 1.8 $μ$m). The spacecraft will be capable of performing fast repointing of the IRT to the error region provided by the monitors, thus allowing it to detect and localize the transient sources down to a few arcsec accuracy, for immediate identification and redshift determination. The prime goal of the XGIS will be to detect transient sources, with monitoring timescales down to milliseconds, both independently of, or following, up SXI detections, and identify the sources performing localisation at < 15 arcmin and characterize them over a broad energy band, thus providing also unique clues to their emission physics. The XGIS system consists of two independent but identical coded mask cameras, arranged to cover 2 steradians . The XGIS will exploit an innovative technology coupling Silicon Drift Detectors (SDD) with crystal scintillator bars and a very low-noise distributed front-end electronics (ORION ASICs), which will produce a position sensitive detection plane, with a large effective area over a huge energy band (from soft X-rays to soft gamma-rays) with timing resolution down to a few $μ$s.Here is presented an overview of the XGIS instrument design, its configuration, and capabilities.

preprint2021arXiv

The XGIS instrument on-board THESEUS: the detection plane and on-board electronics

The X and Gamma Imaging Spectrometer instrument on-board the THESEUS mission (selected by ESA in the framework of the Cosmic Vision M5 launch opportunity, currently in phase A) is based on a detection plane composed of several thousands of single active elements. Each element comprises a 4.5x4.5x30 mm 3 CsI(Tl) scintillator bar, optically coupled at both ends to Silicon Drift Detectors (SDDs). The SDDs acts both as photodetectors for the scintillation light and as direct X-ray sensors. In this paper the design of the XGIS detection plane is reviewed, outlining the strategic choices in terms of modularity and redundancy of the system. Results on detector-electronics prototypes are also described. Moreover, the design and development of the low-noise front-end electronics is presented, emphasizing the innovative architectural design based on custom-designed Application-Specific Integrated Circuits (ASICs).

preprint2016arXiv

Development of New 3D Pixel Sensors for Phase 2 Upgrades at LHC

We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a fluence of 2e16 neq cm-2), thinner 3D sensors (~100 um) with electrodes having narrower size (~ 5 um) and reduced spacing (~ 30 um) are considered. The paper covers TCAD simulations, as well as technological and design aspects relevant to the first batch of these 3D sensors, that is currently being fabricated at FBK on 6-inch wafers.

preprint2016arXiv

Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.

preprint2016arXiv

The INFN-FBK Phase-2 R{\&}D Program

We report on the 3-year INFN ATLAS-CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6-inch p-type wafers. The technology and the design will be optimized and qualified for extreme radiation hardness (2e16 neq cm-2). Pixel layouts compatible with present (for testing) and future (RD53 65nm) front-end chips of ATLAS and CMS are considered. The paper covers the main aspects of the research program, from the sensor design and fabrication technology, to the results of initial tests performed on the first prototypes.

preprint2013arXiv

Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades

In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these demands. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch.