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Nickolas Groll

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2 publications

preprint2015arXiv

Analysis of Nb3Sn surface layers for superconducting RF cavity applications

We present an analysis of the Nb3Sn surface layers grown on a bulk niobium (Nb) coupon prepared at the same time and by the same vapor diffusion process used to make Nb3Sn coatings on 1.3 GHz cavities. Tunneling spectroscopy reveals a well-developed, homogeneous superconducting density of states at the surface with a gap value distribution centered around 2.7 meV and superconducting critical temperature (Tc) up to 16.3 K. Scanning Electron microscopy (STEM) performed on cross section of the sample's surface region shows a 2 microns thick Nb3Sn surface layer. The elemental composition map exhibits a Nb over Sn ratio of 3 and reveals the presence of buried sub-stoichiometric regions that have a ratio f 5. Synchrotron x-ray diffraction experiments indicate a polycrystalline Nb3Sn film and confirm the presence of Nb rich regions that occupy about a third of the coating volume. These low Tc regions could play an important role in the dissipation mechanism occurring during RF tests of Nb3Sn-coated cavities and open the way for further improving a very promising alternative to pure Nb cavities for particle accelerators.

preprint2013arXiv

Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition

A tunneling spectroscopy study is presented of superconducting MoN and Nb0.8_{0.8}Ti0.2_{0.2}N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical temperature of 11.5K and 13.4K, among the highest reported TcT_c values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below ∼\sim10%) were obtained using an artificial tunnel barrier of Al2_2O3_3 on the film's surface grown ex situ\textit{ex situ} by ALD. We find a large critical current density on the order of 4×1064\times 10^6A/cm2^2 at T=0.8TcT=0.8T_c for a 60nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest the ALD technique offers significant promise for thin film superconducting device applications.

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