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Researcher profile

Nicholas D. M. Hine

Nicholas D. M. Hine contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.chem-phphysics.comp-phBiological Physicsquant-ph

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Published work

10 published item(s)

preprint2022arXiv

Ab initio study on the atomic and electronic structures of twisted InSe bilayer

The electronic properties of the twisted InSe bilayer are studied by large-scale density functional theory. Spectral Function Unfolding reveals that the electronic structure of the twisted system can be described in terms of a combination of features of the bandstructures of the aligned InSe bilayer with different stacking configurations, enabling predictions of the band gap and the effective mass for holes. The effective mass for holes in the twisted InSe bilayer is shown to be influenced primarily by the interlayer distance. The intralayer and interlayer exciton binding energies are thus calculated based on a model recently developed by Ruiz-Tijerina et al. We apply similar analysis to the trilayer heterostructure InSe/hBN/InSe: its electronic structure is shown to be well-described by the superposition of band structures of two InSe monolayers with a small coupling through the hBN layer.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures

In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattice in the neighbouring layer. Using angle-resolved photoemission spectroscopy to study a graphene on InSe heterostructure, we present evidence that interlayer umklapp processes can cause hybridization between bands from neighbouring layers in regions of the Brillouin zone where bands from only one layer are expected, despite no evidence for moir/'e-induced replica bands. This phenomenon manifests itself as 'ghost' anti-crossings in the InSe electronic dispersion. Applied to a range of suitable 2DM pairs, this phenomenon of interlayer umklapp hybridization can be used to create strong mixing of their electronic states, giving a new tool for twist-controlled band structure engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Atomic and electronic structure of two-dimensional Mo(1-x)WxS2 alloys

Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applications. Due to their similar lattice parameters, the two-dimensional semiconducting transition metal dichalcogenides of the MoWSeS group (MX2 where M= Mo or W and X=S or Se) can be grown as high-quality materials with low defect concentrations. Here we investigate the atomic and electronic structure of Mo(1-x)WxS2 alloys using a combination of high-resolution experimental techniques and simulations. Analysis of the Mo and W atomic positions in these alloys, grown by chemical vapour transport, shows that they are randomly distributed, consistent with Monte Carlo simulations that use interaction energies determined from first-principles calculations. Electronic structure parameters are directly determined from angle resolved photoemission spectroscopy measurements. These show that the spin-orbit splitting at the valence band edge increases linearly with W content from MoS2 to WS2, in agreement with linear-scaling density functional theory (LS-DFT) predictions. The spin-orbit splitting at the conduction band edge is predicted to reduce to zero at intermediate compositions. Despite this, polarisation-resolved photoluminescence spectra on monolayer Mo0.5W0.5S2 show significant circular dichroism, indicating that spin-valley locking is retained. These results demonstrate that alloying is an important tool for controlling the electronic structure of MX2 for spintronic and valleytronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

ONETEP + TOSCAM: uniting dynamical mean field theory and linear-scaling density functional theory

We introduce the unification of dynamical mean field theory (DMFT) and linear-scaling density functional theory (DFT), as recently implemented in ONETEP, a linear-scaling DFT package, and TOSCAM, a DMFT toolbox. This code can account for strongly correlated electronic behavior while simultaneously including the effects of the environment, making it ideally suited for studying complex and heterogeneous systems containing transition metals and lanthanides, such as metalloproteins. We systematically introduce the necessary formalism, which must account for the non-orthogonal basis set used by ONETEP. In order to demonstrate the capabilities of this code, we apply it to carbon monoxide-ligated iron porphyrin and explore the distinctly quantum-mechanical character of the iron $3d$ electrons during the process of photodissociation.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Supercell convergence of charge-transfer energies in pentacene molecular crystals from constrained DFT

Singlet fission (SF) is a multi-exciton generation process that could be harnessed to improve the efficiency of photovoltaic devices. Experimentally, systems derived from the pentacene molecule have been shown to exhibit ultrafast SF with high yields. Charge-transfer (CT) configurations are likely to play an important role as intermediates in the SF process in these systems. In molecular crystals, electrostatic screening effects and band formation can be significant in lowering the energy of CT states, enhancing their potential to effectively participate in SF. In order to simulate these, it desirable to adopt a computational approach which is acceptably accurate, relatively inexpensive, which and scales well to larger systems, thus enabling the study of screening effects. We propose a novel, electrostatically-corrected constrained Density Functional Theory (cDFT) approach as a low-cost solution to the calculation of CT energies in molecular crystals such as pentacene. Here we consider an implementation in the context of the ONETEP linear-scaling DFT code, but our electrostatic correction method is in principle applicable in combination with any constrained DFT implementation, also outside the linear-scaling framework. Our newly developed method allows us to estimate CT energies in the infinite crystal limit, and with these to validate the accuracy of the cluster approximation.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Importance of many body effects in the kernel of hemoglobin for ligand binding

We propose a mechanism for binding of diatomic ligands to heme based on a dynamical orbital selection process. This scenario may be described as bonding determined by local valence fluctuations. We support this model using linear-scaling first-principles calculations, in combination with dynamical mean-field theory, applied to heme, the kernel of the hemoglobin metalloprotein central to human respiration. We find that variations in Hund's exchange coupling induce a reduction of the iron 3d density, with a concomitant increase of valence fluctuations. We discuss the comparison between our computed optical absorption spectra and experimental data, our picture accounting for the observation of optical transitions in the infrared regime, and how the Hund's coupling reduces, by a factor of five, the strong imbalance in the binding energies of heme with CO and O_2 ligands.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fermi level pinning can determine polarity in semiconductor nanorods

First-principles calculations of polar semiconductor nanorods reveal that their dipole moments are strongly influenced by Fermi level pinning. The Fermi level for an isolated nanorod is found to coincide with a significant density of electronic surface states at the end surfaces, which are either mid-gap states or band-edge states. These states pin the Fermi level, and therefore fix the potential difference across the rod. We provide evidence that this effect can have a determining influence on the polarity of nanorods, and has consequences for the way a rod responds to changes in its surface chemistry, the scaling of its dipole moment with its size, and the dependence of polarity on its composition.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Linear-scaling DFT+U with full local orbital optimization

We present an approach to the DFT+U method (Density Functional Theory + Hubbard model) within which the computational effort for calculation of ground state energies and forces scales linearly with system size. We employ a formulation of the Hubbard model using nonorthogonal projector functions to define the localized subspaces, and apply it to a local-orbital DFT method including in situ orbital optimization. The resulting approach thus combines linear-scaling and systematic variational convergence. We demonstrate the scaling of the method by applying it to nickel oxide nano-clusters with sizes exceeding 7,000 atoms.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Vanadium dioxide : A Peierls-Mott insulator stable against disorder

Vanadium dioxide undergoes a first order metal-insulator transition at 340 K. In this work, we develop and carry out state of the art linear scaling DFT calculations refined with non-local dynamical mean-field theory. We identify a complex mechanism, a Peierls-assisted orbital selection Mott instability, which is responsible for the insulating M$_1$ phase, and furthermore survives a moderate degree of disorder.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Factors influencing the distribution of charge in polar nanocrystals

We perform first-principles calculations of wurtzite GaAs nanorods to explore the factors determining charge distributions in polar nanostructures. We show that both the direction and magnitude of the dipole moment $\mathbf{d}$ of a nanorod, and its electic field, depend sensitively on how its surfaces are terminated and do not depend strongly on the spontaneous polarization of the underlying lattice. We identify two physical mechanisms by which $\mathbf{d}$ is controlled by the surface termination, and we show that the excess charge on the nanorod ends is not strongly localized. We discuss the implications of these results for tuning nanocrystal properties, and for their growth and assembly.

0 citations0 reviewsNo code linkedOpen access