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Researcher profile

Niall McEvoy

Niall McEvoy contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phphysics.optics

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Published work

4 published item(s)

preprint2022arXiv

Absorbance Enhancement of Monolayer MoS$_2$ in a Perfect Absorbing System

We reveal numerically and experimentally that dielectric resonance can enhance the absorbance and emission of monolayer MoS$_2$. By quantifying the absorbance of the Si disk resonators and the monolayer MoS$_2$ separately, a model taking into account of absorbance as well as quantum efficiency modifications by the dielectric disk resonators successfully explains the observed emission enhancement under the normal light incidence. It is demonstrated that the experimentally observed emission enhancement at different pump wavelength results from the absorbance enhancement, which compensates the emission quenching by the disk resonators. In order to further maximize the absorbance value of monolayer MoS$_2$, a perfect absorbing structure is proposed. By placing a Au mirror beneath the Si nanodisks, the incident electromagnetic power is fully absorbed by the hybrid monolayer MoS$_2$-disk system. It is demonstrated that the electromagnetic power is re-distributed within the hybrid structure and 53\% of the total power is absorbed by the monolayer MoS$_2$ at the perfect absorbing wavelength.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spectroscopic thickness and quality metrics for PtSe$_2$ layers produced by top-down and bottom-up techniques

Thin films of noble-metal-based transition metal dichalcogenides, such as PtSe$_2$, have attracted increasing attention due to their interesting layer-number dependent properties and application potential. While it is difficult to cleave bulk crystals down to mono- and few-layers, a range of growth techniques have been established producing material of varying quality and layer number. However, to date, no reliable high-throughput characterization to assess layer number exists. Here, we use top-down liquid phase exfoliation (LPE) coupled with centrifugation to produce widely basal plane defect-free PtSe$_2$ nanosheets of varying sizes and thicknesses. Quantification of the lateral dimensions by statistical atomic force microscopy allows us to quantitatively link information contained in optical spectra to the dimensions. For LPE nanosheets we establish metrics for lateral size and layer number based on extinction spectroscopy. Further, we compare the Raman spectroscopic response of LPE nanosheets with micromechanically exfoliated PtSe$_2$, as well as thin films produced by a range of bottom up techniques. We demonstrate that the Eg1 peak position and the intensity ratio of the Eg1/ A1g1 peaks can serve as robust metric for layer number across all sample types and will be of importance in future benchmarking of PtSe$_2$ films.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants

Tungsten ditelluride is a layered transition metal dichalcogenide (TMD) that has attracted increasing research interest in recent years. WTe2 has demonstrated large non-saturating magnetoresistance, potential for spintronic applications and promise as a type-II Weyl semimetal. The majority of works on WTe2 have relied on mechanically-exfoliated flakes from chemical vapour transport (CVT) grown crystals for their investigations. While producing high-quality samples, this method is hindered by several disadvantages including long synthesis times, high-temperature anneals and an inherent lack of scalability. In this work, a synthesis method is demonstrated that allows the production of large-area polycrystalline films of WTe2. This is achieved by the reaction of pre-deposited films of W and Te at a relatively low temperature of 550 degC. Sputter X-ray photoelectron spectroscopy reveals the rapid but self-limiting nature of the oxidation of these WTe2 films in ambient conditions. The WTe2 films are composed of areas of micrometre sized nanobelts that can be isolated and offer potential as an alternative to CVT-grown samples. These nanobelts are highly crystalline with low defect densities indicated by TEM and show promising initial electrical results.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors

We study the effect of polymer coating, pressure and temperature on the electrical characteristics of monolayer WSe2 back-gated transistors with quasi-ohmic Ni/Au contacts. We find that the removal of a layer of poly(methyl methacrylate) or decreasing the pressure change the device conductivity from p to n-type. We study the current-voltage characteristics as a function of the temperature and measure a gate-tunable Schottky barrier at the contacts with a height of 60 meV in flat-band condition. We report and discuss a change in the mobility and the subthreshold slope observed with increasing temperature. Finally, we estimate the trap density at the WSe2/SiO2 interface and study the spectral photoresponse of the device, achieving a responsivity of 0.5 AW^-1 at 700 nm wavelength and 0.37 mWcm^-2 optical power.

0 citations0 reviewsNo code linkedOpen access