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Neil M. Zimmerman

Neil M. Zimmerman appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallphysics.ed-ph

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Published work

9 published item(s)

preprint2016arXiv

"What is The SI?" A Proposal for an Educational Adjunct to the SI Redefinition

We discuss how the likely 2018 redefinition of the SI system of units might affect the ability of students to understand the link between the units and the new system. The likely redefinition will no longer define a set of base units, but rather a set of constants of nature, such as the speed of light c and a particular hyperfine splitting in Cs $Δν(^{133}$Cs)$_{hfs}$. We point out that this list of constants need not be the only way to introduce students to the subject, either in class or in textbooks. We suggest an alternative way to introduce high school and undergraduate students to the redefined SI, by suggesting a list of experiments for some units; this list would be completely compatible with the redefined SI, and would have all of the same scientific and technological advantages. We demonstrate by questionnaire results that this alternative is more appealing to students. We hope to spur a discussion amongst teachers regarding this important topic for high school and undergraduate physics courses.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A new Regime of Pauli-Spin Blockade

Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we theoretically explore Pauli-spin blockade as a function of magnetic field B applied parallel to the substrate. In the well-studied low magnetic field regime, where PSB occurs in the forward $(1,1)\rightarrow(0,2)$ tunneling direction, we highlight some aspects of PSB that are not discussed in detail in existing literature, including the change in size of both bias triangles measured in the forward and reverse biasing directions as a function of B. At higher fields we predict a crossover to \reverse PSB" in which current is blockaded in the reverse direction due to the occupation of a spin singlet as opposed to the traditional triplet blockade that occurs at low fields. The onset of reverse PSB coincides with the development of a tail like feature in the measured bias triangles and occurs when the Zeeman energy of the polarized triplet equals the exchange energy in the (0,2) charge configuration. In Si quantum dots these fields are experimentally accessible; thus, this work suggests a way to probe singlet to triplet relaxation mechanisms in quantum dots when both electrons occupy the same quantum dot.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A quantitative study of bias triangles presented in chemical potential space

We present measurements of bias triangles in several biasing configurations. Thorough analysis of the data allows us to present data from all four possible bias configurations on a single plot in chemical potential space. This presentation allows comparison between different biasing directions to be made in a clean and straightforward manner. Our analysis and presentation will prove useful in demonstrations of Pauli-spin blockade where comparisons between different biasing directions are paramount. The long term stability of the CMOS compatible Si/SiO2 only architecture leads to the success of this analysis. We also propose a simple variation to this analysis that will extend its use to systems lacking the long term stability of these devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Charge Offset Stability in Si Single Electron Devices with Al Gates

We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 $e$) is intermediate between that of Al/AlO$_x$/Al tunnel junctions (greater than 1 $e$) and Si SEDs defined with Si gates (0.01 $e$). This range of values suggests that defects in the AlO$_x$ are the main cause of the charge offset drift instability.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Formation of Strain-Induced Quantum Dots in Gated Semiconductor Nanostructures

Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots (QDs). We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Dephasing of Si singlet-triplet qubits due to charge and spin defects

We study the effect of charge and spin noise on singlet-triplet qubits in Si quantum dots. We set up a theoretical framework aimed at enabling experiment to efficiently identify the most deleterious defects, and complement it with the knowledge of defects gained in decades of industrial and academic work. We relate the dephasing rates $Γ_ϕ$ due to various classes of defects to experimentally measurable parameters such as charge dipole moment, spin dipole moment and fluctuator switching times. We find that charge fluctuators are more efficient in causing dephasing than spin fluctuators.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Determining the Location and Cause of Unintentional Quantum Dots in a Nanowire

We determine the locations of unintentional quantum dots (U-QDs) in a silicon nanowire with a precision of a few nanometers by comparing the capacitances to multiple gates with a capacitance simulation. Because we observe U-QDs in the same location of the wire in multiple devices, their cause is likely to be an unintended consequence of the fabrication, not random atomic-scale defects as is typically assumed. The locations of the U-QDs appear consistent with conduction band modulation from strain from the oxide and the gates. This allows us to suggest methods to reduce the frequency of U-QDs.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices

We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 GΩ, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a fully CMOS process for single electron device fabrication.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model

Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproducible. We demonstrate in silicon nanowire quantum dots that gate capacitances are reproducible to within 10% for nominally identical devices. We demonstrate the experimentally that gate capacitances scale with device dimensions. We also demonstrate that a capacitance simulator can be used to predict measured gate capacitances to within 20%. A simple parallel plate capacitor model can be used to predict how the capacitances change with device dimensions; however, the parallel plate capacitor model fails for the smallest devices because the capacitances are dominated by fringing fields. We show how the capacitances due to fringing fields can be quickly estimated.

0 citations0 reviewsNo code linkedOpen access