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Neelima Basavaraju

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2 publications

preprint2015arXiv

Order and disorder around Cr3+^{3+} in chromium doped persistent luminescence AB2_2O4_4 spinels

X-ray absorption near edge structure (XANES) spectroscopy technique is used to better understand the charging and decharging processes of the persistent luminescence in the Cr3+^{3+} doped AB2_2O4_4 spinels (A = Zn, Mg and B = Ga and Al) with low photon energy excitation by visible light. Cr K edge XANES spectra have been simulated for different near neighbour environments around the Cr3+^{3+} recombination centres and compared with the experimental curve. In Cr3+^{3+}:ZnGa2_2O4_4 compound, the Cr3+^{3+} local structure corresponds mostly to that of a normal spinel (∼\sim70\%), while the rest comprises of distorted octahedral environment arising from cationic site inversion and a contribution from chromium clustering. This local structure is strongly different in Cr3+^{3+}:MgGa2_2O4_4 and Cr3+^{3+}:ZnAl2_2O4_4 where, for both cases, chromium clustering represents the main contribution. The strong correlation between the intensity of persistent luminescence and \% of Cr in clusters leads us to infer that presence of Cr clusters is responsible for decrease of the intensity of the visible light induced persistent luminescence in the Cr3+^{3+} doped AB2_2O4_4 spinels.

preprint2014arXiv

The importance of inversion disorder in the visible light induced persistent luminescence in Cr3+^{3+} doped AB2_2O4_4 (A = Zn or Mg and B = Ga or Al)

Cr3+^{3+} doped spinel compounds AB2_2O4_4 with A=Zn, Mg and B=Ga, Al exhibit a long near infrared persistent luminescence when excited with UV or X-rays. In addition, persistent luminescence of ZnGa2_2O4_4 and to a lesser extent MgGa2_2O4_4, can also be induced by visible light excitation via 4^4A2_2 → \rightarrow 4^4T2_2 transition of Cr3+^{3+}, which makes these compounds suitable as biomarkers for in vivo optical imaging of small animals. We correlate this peculiar optical property with the presence of antisite defects, which are present in ZnGa2_2O4_4 and MgGa2_2O4_4. By using X-ray absorption fine structure (XAFS) spectroscopy, associated with electron paramagnetic resonance (EPR) and optical emission spectroscopy, it is shown that an increase in antisite defects concentration results in a decrease in the Cr-O bond length and the octahedral crystal field energy. A part of the defects are in the close environment of Cr3+^{3+} ions, as shown by the increasing strain broadening of EPR and XAFS peaks observed upon increasing antisite disorder. It appears that ZnAl2_2O4_4, which exhibits the largest crystal field splitting of Cr3+^{3+} and the smallest antisite disorder, does not show considerable persistent luminescence upon visible light excitation as compared to ZnGa2_2O4_4 and MgGa2_2O4_4. These results highlight the importance of Cr3+^{3+} ions with neighboring antisite defects in the mechanism of persistent luminescence exhibited by Cr3+^{3+} doped AB2_2O4_4 spinel compounds.

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